FQU9N25TU
  • Share:

onsemi FQU9N25TU

Manufacturer No:
FQU9N25TU
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FQU9N25TU Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 250V 7.4A IPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:420mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 55W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
0 Remaining View Similar

In Stock

$1.18
572

Please send RFQ , we will respond immediately.

Similar Products

Part Number FQU9N25TU FQU4N25TU   FQU6N25TU   FQU8N25TU  
Manufacturer onsemi Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor
Product Status Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V 250 V 250 V 250 V
Current - Continuous Drain (Id) @ 25°C 7.4A (Tc) 3A (Tc) 4.4A (Tc) 6.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 420mOhm @ 3.7A, 10V 1.75Ohm @ 1.5A, 10V 1Ohm @ 2.2A, 10V 550mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V 5.6 nC @ 10 V 8.5 nC @ 10 V 15 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 25 V 200 pF @ 25 V 300 pF @ 25 V 530 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 2.5W (Ta), 55W (Tc) 2.5W (Ta), 37W (Tc) 2.5W (Ta), 45W (Tc) 2.5W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package I-PAK I-PAK I-PAK I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

Related Product By Categories

IRLZ34NPBF
IRLZ34NPBF
Infineon Technologies
MOSFET N-CH 55V 30A TO220AB
IRFR120TRRPBF-BE3
IRFR120TRRPBF-BE3
Vishay Siliconix
MOSFET N-CH 100V 7.7A DPAK
SSM3K376R,LF
SSM3K376R,LF
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 4A SOT23F
IRL7833PBF
IRL7833PBF
Infineon Technologies
MOSFET N-CH 30V 150A TO220AB
SQJ152EP-T1_GE3
SQJ152EP-T1_GE3
Vishay Siliconix
AUTOMOTIVE N-CHANNEL 40 V (D-S)
IRFU4105
IRFU4105
Infineon Technologies
MOSFET N-CH 55V 27A IPAK
IRLR2905CPBF
IRLR2905CPBF
Infineon Technologies
MOSFET N-CH 55V 36A DPAK
IXFL55N50
IXFL55N50
IXYS
MOSFET N-CH 500V 55A ISOPLUS264
IPP60R230P6XKSA1
IPP60R230P6XKSA1
Infineon Technologies
MOSFET N-CH 600V 16.8A TO220-3
IXFK24N100F
IXFK24N100F
IXYS
MOSFET N-CH 1000V 24A TO264
AON6152
AON6152
Alpha & Omega Semiconductor Inc.
MOSFET N-CHANNEL 45V 100A 8DFN
ZDX080N50
ZDX080N50
Rohm Semiconductor
MOSFET N-CH 500V 8A TO220FM

Related Product By Brand

1SMB9.0AT3G
1SMB9.0AT3G
onsemi
TVS DIODE 9VWM 15.4VC SMB
1PMT51AT1
1PMT51AT1
onsemi
TVS DIODE 51VWM 82.4VC POWERMITE
1N6379G
1N6379G
onsemi
TVS DIODE 22VWM 37.5VC AXIAL
DSK10C-AT1
DSK10C-AT1
onsemi
DIODE GEN PURP 200V 1A AXIAL
MM5Z9V1ST5G
MM5Z9V1ST5G
onsemi
DIODE ZENER 9.1V 500MW SOD523
BZX84C22LT1
BZX84C22LT1
onsemi
DIODE ZENER 22V 225MW SOT23-3
KSC3503ESTU
KSC3503ESTU
onsemi
TRANS NPN 300V 0.1A TO126-3
NTBGS2D5N06C
NTBGS2D5N06C
onsemi
POWER MOSFET, 60 V, 2.5 M?, 224
MC10EP139DTR2G
MC10EP139DTR2G
onsemi
IC CLK GEN 2/4 4/5/6 ECL 20TSSOP
74ALVC245MTC
74ALVC245MTC
onsemi
IC TXRX NON-INVERT 3.6V 20TSSOP
MC10EP90DTR2G
MC10EP90DTR2G
onsemi
IC TRNSLTR UNIDIR 20TSSOP
AXM0F343-64-1-TX40
AXM0F343-64-1-TX40
onsemi
ULTRA-LOW POWER NARROW-BAND SUB