FQU6P25TU
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onsemi FQU6P25TU

Manufacturer No:
FQU6P25TU
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FQU6P25TU Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 250V 4.7A IPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.1Ohm @ 2.35A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:780 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 55W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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Similar Products

Part Number FQU6P25TU FQU4P25TU   FQU6N25TU  
Manufacturer onsemi Fairchild Semiconductor Fairchild Semiconductor
Product Status Obsolete Obsolete Obsolete
FET Type P-Channel P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V 250 V 250 V
Current - Continuous Drain (Id) @ 25°C 4.7A (Tc) 3.1A (Tc) 4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.1Ohm @ 2.35A, 10V 2.1Ohm @ 1.55A, 10V 1Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V 14 nC @ 10 V 8.5 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 780 pF @ 25 V 420 pF @ 25 V 300 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 2.5W (Ta), 55W (Tc) 2.5W (Ta), 45W (Tc) 2.5W (Ta), 45W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package I-PAK I-PAK I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

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