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| Part Number | FQU2N60CTU | FQU5N60CTU | FQU2N60TU | FQU3N60CTU | FQU1N60CTU |
|---|---|---|---|---|---|
| Manufacturer | onsemi | onsemi | Fairchild Semiconductor | onsemi | onsemi |
| Product Status | Last Time Buy | Last Time Buy | Obsolete | Obsolete | Last Time Buy |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V | 600 V | 600 V | 600 V | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 1.9A (Tc) | 2.8A (Tc) | 2A (Tc) | 2.4A (Tc) | 1A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 4.7Ohm @ 950mA, 10V | 2.5Ohm @ 1.4A, 10V | 4.7Ohm @ 1A, 10V | 3.4Ohm @ 1.2A, 10V | 11.5Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 5V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V | 19 nC @ 10 V | 11 nC @ 10 V | 14 nC @ 10 V | 6.2 nC @ 10 V |
| Vgs (Max) | ±30V | ±30V | ±30V | ±30V | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 235 pF @ 25 V | 670 pF @ 25 V | 350 pF @ 25 V | 565 pF @ 25 V | 170 pF @ 25 V |
| FET Feature | - | - | - | - | - |
| Power Dissipation (Max) | 2.5W (Ta), 44W (Tc) | 2.5W (Ta), 49W (Tc) | 2.5W (Ta), 45W (Tc) | 50W (Tc) | 2.5W (Ta), 28W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | I-PAK | I-PAK | I-PAK | I-PAK | I-PAK |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
