FQU13N10TU
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onsemi FQU13N10TU

Manufacturer No:
FQU13N10TU
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FQU13N10TU Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 10A IPAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:180mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:450 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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Similar Products

Part Number FQU13N10TU FQU13N10LTU  
Manufacturer onsemi onsemi
Product Status Obsolete Last Time Buy
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 5V, 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 5A, 10V 180mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V 12 nC @ 5 V
Vgs (Max) ±25V ±20V
Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 25 V 520 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 40W (Tc) 2.5W (Ta), 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package I-PAK I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

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