FQU11P06TU
  • Share:

onsemi FQU11P06TU

Manufacturer No:
FQU11P06TU
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FQU11P06TU Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 60V 9.4A IPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:185mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:550 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 38W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
0 Remaining View Similar

In Stock

$0.92
5

Please send RFQ , we will respond immediately.

Similar Products

Part Number FQU11P06TU FQU17P06TU  
Manufacturer onsemi onsemi
Product Status Last Time Buy Last Time Buy
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 9.4A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 185mOhm @ 4.7A, 10V 135mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V 27 nC @ 10 V
Vgs (Max) ±30V ±25V
Input Capacitance (Ciss) (Max) @ Vds 550 pF @ 25 V 900 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 38W (Tc) 2.5W (Ta), 44W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package I-PAK I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

Related Product By Categories

SI7852ADP-T1-GE3
SI7852ADP-T1-GE3
Vishay Siliconix
MOSFET N-CH 80V 30A PPAK SO-8
IPW65R019C7FKSA1
IPW65R019C7FKSA1
Infineon Technologies
MOSFET N-CH 650V 75A TO247-3
PSMN1R2-25YL,115
PSMN1R2-25YL,115
Nexperia USA Inc.
MOSFET N-CH 25V 100A LFPAK56
SIHG80N60EF-GE3
SIHG80N60EF-GE3
Vishay Siliconix
MOSFET N-CH 600V 80A TO247AC
2N7002T-7
2N7002T-7
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT-523
VN10LPSTOA
VN10LPSTOA
Diodes Incorporated
MOSFET N-CH 60V 270MA E-LINE
ZVP0545GTC
ZVP0545GTC
Diodes Incorporated
MOSFET P-CH 450V 75MA SOT223
FQU4N20TU
FQU4N20TU
onsemi
MOSFET N-CH 200V 3A IPAK
NTD4858NA-35G
NTD4858NA-35G
onsemi
MOSFET N-CH 25V 11.2A/73A IPAK
SI7370ADP-T1-GE3
SI7370ADP-T1-GE3
Vishay Siliconix
MOSFET N-CH 60V 50A PPAK SO-8
IXFP4N60P3
IXFP4N60P3
IXYS
MOSFET N-CH 600V 4A TO220AB
RTL035N03TR
RTL035N03TR
Rohm Semiconductor
MOSFET N-CH 30V 3.5A TUMT6

Related Product By Brand

MJH11020
MJH11020
onsemi
TRANS NPN DARL 200V 15A SOT93
BC327-016G
BC327-016G
onsemi
TRANS PNP 45V 0.8A TO92
FDS4435
FDS4435
onsemi
MOSFET P-CH 30V 8.8A 8SOIC
FDD9511L-F085
FDD9511L-F085
onsemi
MOSFET P-CH 40V 25A DPAK
NCS21874DR2G
NCS21874DR2G
onsemi
IC OPAMP ZER-DRIFT 4CIRC 14SOIC
MC74HC02AF
MC74HC02AF
onsemi
IC GATE NOR 4CH 2-INP SOEIAJ-14
NLV74HC373ADWR2G
NLV74HC373ADWR2G
onsemi
OCTAL 3-STATE NI LATCH 20SOIC
DM74LS257BN
DM74LS257BN
onsemi
IC MULTIPLEXER 4 X 2:1 16DIP
MC10H351MELG
MC10H351MELG
onsemi
IC TRNSLTR UNIDIR 20SOEIAJ
LE24CB642M-TLM-E
LE24CB642M-TLM-E
onsemi
IC EEPROM 64KBIT I2C 400KHZ 8MFP
NCP302LSN37T1
NCP302LSN37T1
onsemi
IC SUPERVISOR PWR SUP SUPPORT
MAX810SQ293D1T1G
MAX810SQ293D1T1G
onsemi
IC SUPERVISOR 1 CHANNEL SC70-3