FQT7N10TF
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onsemi FQT7N10TF

Manufacturer No:
FQT7N10TF
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FQT7N10TF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 1.7A SOT223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:350mOhm @ 850mA, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:250 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223-4
Package / Case:TO-261-4, TO-261AA
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$0.75
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Similar Products

Part Number FQT7N10TF FQT7N10LTF  
Manufacturer onsemi onsemi
Product Status Last Time Buy Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 1.7A (Tc) 1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 5V, 10V
Rds On (Max) @ Id, Vgs 350mOhm @ 850mA, 10V 350mOhm @ 850mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.5 nC @ 10 V 6 nC @ 5 V
Vgs (Max) ±25V ±20V
Input Capacitance (Ciss) (Max) @ Vds 250 pF @ 25 V 290 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2W (Tc) 2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-223-4 SOT-223-4
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

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