FQT7N10LTF
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onsemi FQT7N10LTF

Manufacturer No:
FQT7N10LTF
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FQT7N10LTF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 1.7A SOT223-4
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:350mOhm @ 850mA, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:290 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223-4
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number FQT7N10LTF FQT7N10TF  
Manufacturer onsemi onsemi
Product Status Active Last Time Buy
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 1.7A (Tc) 1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 10V
Rds On (Max) @ Id, Vgs 350mOhm @ 850mA, 10V 350mOhm @ 850mA, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 5 V 7.5 nC @ 10 V
Vgs (Max) ±20V ±25V
Input Capacitance (Ciss) (Max) @ Vds 290 pF @ 25 V 250 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2W (Tc) 2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-223-4 SOT-223-4
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

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