FQT13N06LTF
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onsemi FQT13N06LTF

Manufacturer No:
FQT13N06LTF
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FQT13N06LTF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 2.8A SOT223-4
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:110mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.4 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.1W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223-4
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number FQT13N06LTF FQT13N06TF  
Manufacturer onsemi onsemi
Product Status Last Time Buy Last Time Buy
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 2.8A (Tc) 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 1.4A, 10V 140mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.4 nC @ 5 V 7.5 nC @ 10 V
Vgs (Max) ±20V ±25V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 25 V 310 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2.1W (Tc) 2.1W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-223-4 SOT-223-4
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

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