FQPF7N80
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onsemi FQPF7N80

Manufacturer No:
FQPF7N80
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FQPF7N80 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 3.8A TO220F
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.5Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:52 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1850 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):56W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F-3
Package / Case:TO-220-3 Full Pack
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Part Number FQPF7N80 FQPF7N80C   FQPF2N80   FQPF3N80   FQPF4N80   FQPF5N80   FQPF6N80   FQPF7N10   FQPF7N20   FQPF7N40   FQPF7N60  
Manufacturer onsemi onsemi onsemi Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor onsemi
Product Status Obsolete Obsolete Active Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V 800 V 800 V 800 V 800 V 100 V 200 V 400 V 600 V
Current - Continuous Drain (Id) @ 25°C 3.8A (Tc) 6.6A (Tc) 1.5A (Tc) 1.8A (Tc) 2.2A (Tc) 2.8A (Tc) 3.3A (Tc) 5.5A (Tc) 4.8A (Tc) 4.6A (Tc) 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.9A, 10V 1.9Ohm @ 3.3A, 10V 6.3Ohm @ 750mA, 10V 5Ohm @ 900mA, 10V 3.6Ohm @ 1.1A, 10V 2.6Ohm @ 1.4A, 10V 1.95Ohm @ 1.65A, 10V 350mOhm @ 2.75A, 10V 690mOhm @ 2.4A, 10V 800mOhm @ 2.3A, 10V 1Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 52 nC @ 10 V 35 nC @ 10 V 15 nC @ 10 V 19 nC @ 10 V 25 nC @ 10 V 33 nC @ 10 V 31 nC @ 10 V 7.5 nC @ 10 V 10 nC @ 10 V 22 nC @ 10 V 38 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±25V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1850 pF @ 25 V 1680 pF @ 25 V 550 pF @ 25 V 690 pF @ 25 V 880 pF @ 25 V 1250 pF @ 25 V 1500 pF @ 25 V 250 pF @ 25 V 400 pF @ 25 V 780 pF @ 25 V 1430 pF @ 25 V
FET Feature - - - - - - - - - - -
Power Dissipation (Max) 56W (Tc) 56W (Tc) 35W (Tc) 39W (Tc) 43W (Tc) 47W (Tc) 51W (Tc) 23W (Tc) 37W (Tc) 42W (Tc) 48W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220F-3 TO-220F-3 TO-220F-3 TO-220F-3 TO-220F-3 TO-220F-3 TO-220F-3 TO-220F-3 TO-220F-3 TO-220F-3 TO-220F-3
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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