FQPF7N60
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onsemi FQPF7N60

Manufacturer No:
FQPF7N60
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FQPF7N60 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 4.3A TO220F
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:38 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1430 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):48W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F-3
Package / Case:TO-220-3 Full Pack
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$2.65
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Part Number FQPF7N60 FQPF7N80   FQPF2N60   FQPF3N60   FQPF4N60   FQPF5N60   FQPF6N60   FQPF7N10   FQPF7N20   FQPF7N40  
Manufacturer onsemi onsemi Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 800 V 600 V 600 V 600 V 600 V 600 V 100 V 200 V 400 V
Current - Continuous Drain (Id) @ 25°C 4.3A (Tc) 3.8A (Tc) 1.6A (Tc) 2A (Tc) 2.6A (Tc) 2.8A (Tc) 3.6A (Tc) 5.5A (Tc) 4.8A (Tc) 4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1Ohm @ 2.2A, 10V 1.5Ohm @ 1.9A, 10V 4.7Ohm @ 800mA, 10V 3.6Ohm @ 1A, 10V 2.2Ohm @ 1.3A, 10V 2Ohm @ 1.4A, 10V 1.5Ohm @ 1.8A, 10V 350mOhm @ 2.75A, 10V 690mOhm @ 2.4A, 10V 800mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V 52 nC @ 10 V 11 nC @ 10 V 13 nC @ 10 V 20 nC @ 10 V 20 nC @ 10 V 25 nC @ 10 V 7.5 nC @ 10 V 10 nC @ 10 V 22 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±25V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1430 pF @ 25 V 1850 pF @ 25 V 350 pF @ 25 V 450 pF @ 25 V 670 pF @ 25 V 730 pF @ 25 V 1000 pF @ 25 V 250 pF @ 25 V 400 pF @ 25 V 780 pF @ 25 V
FET Feature - - - - - - - - - -
Power Dissipation (Max) 48W (Tc) 56W (Tc) 28W (Tc) 34W (Tc) 36W (Tc) 40W (Tc) 44W (Tc) 23W (Tc) 37W (Tc) 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220F-3 TO-220F-3 TO-220F-3 TO-220F-3 TO-220F-3 TO-220F-3 TO-220F-3 TO-220F-3 TO-220F-3 TO-220F-3
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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