FQPF6N90
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onsemi FQPF6N90

Manufacturer No:
FQPF6N90
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FQPF6N90 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 900V 3.4A TO220F
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:3.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.9Ohm @ 1.7A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:52 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1880 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):56W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F-3
Package / Case:TO-220-3 Full Pack
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Part Number FQPF6N90 FQPF6N90C   FQPF2N90   FQPF3N90   FQPF4N90   FQPF5N90   FQPF6N50   FQPF6N60   FQPF6N70   FQPF6N80  
Manufacturer onsemi onsemi Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor onsemi Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 900 V 900 V 900 V 900 V 900 V 500 V 600 V 700 V 800 V
Current - Continuous Drain (Id) @ 25°C 3.4A (Tc) 6A (Tc) 1.4A (Tc) 2.1A (Tc) 2.5A (Tc) 3A (Tc) 3.6A (Tc) 3.6A (Tc) 3.5A (Tc) 3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.9Ohm @ 1.7A, 10V 2.3Ohm @ 3A, 10V 7.2Ohm @ 700mA, 10V 4.25Ohm @ 1.05A, 10V 3.3Ohm @ 1.25A, 10V 2.3Ohm @ 1.5A, 10V 1.3Ohm @ 1.8A, 10V 1.5Ohm @ 1.8A, 10V 1.5Ohm @ 1.75A, 10V 1.95Ohm @ 1.65A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 52 nC @ 10 V 40 nC @ 10 V 15 nC @ 10 V 26 nC @ 10 V 30 nC @ 10 V 40 nC @ 10 V 22 nC @ 10 V 25 nC @ 10 V 40 nC @ 10 V 31 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1880 pF @ 25 V 1770 pF @ 25 V 500 pF @ 25 V 910 pF @ 25 V 1100 pF @ 25 V 1550 pF @ 25 V 790 pF @ 25 V 1000 pF @ 25 V 1400 pF @ 25 V 1500 pF @ 25 V
FET Feature - - - - - - - - - -
Power Dissipation (Max) 56W (Tc) 56W (Tc) 35W (Tc) 43W (Tc) 47W (Tc) 51W (Tc) 42W (Tc) 44W (Tc) 48W (Tc) 51W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220F-3 TO-220F-3 TO-220F-3 TO-220F-3 TO-220F-3 TO-220F-3 TO-220F-3 TO-220F-3 TO-220F-3 TO-220F-3
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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