FQPF2N80
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onsemi FQPF2N80

Manufacturer No:
FQPF2N80
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FQPF2N80 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 1.5A TO220F
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6.3Ohm @ 750mA, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:550 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):35W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F-3
Package / Case:TO-220-3 Full Pack
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Part Number FQPF2N80 FQPF3N80   FQPF2N90   FQPF5N80   FQPF6N80   FQPF4N80   FQPF7N80   FQPF2N30   FQPF2N40   FQPF2N50   FQPF2N60   FQPF2N70  
Manufacturer onsemi Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor onsemi Fairchild Semiconductor onsemi Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor
Product Status Active Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 900 V 800 V 800 V 800 V 800 V 300 V 400 V 500 V 600 V 700 V
Current - Continuous Drain (Id) @ 25°C 1.5A (Tc) 1.8A (Tc) 1.4A (Tc) 2.8A (Tc) 3.3A (Tc) 2.2A (Tc) 3.8A (Tc) 1.34A (Tc) 1.1A (Tc) 1.3A (Tc) 1.6A (Tc) 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 6.3Ohm @ 750mA, 10V 5Ohm @ 900mA, 10V 7.2Ohm @ 700mA, 10V 2.6Ohm @ 1.4A, 10V 1.95Ohm @ 1.65A, 10V 3.6Ohm @ 1.1A, 10V 1.5Ohm @ 1.9A, 10V 3.7Ohm @ 670mA, 10V 5.8Ohm @ 550mA, 10V 5.3Ohm @ 650mA, 10V 4.7Ohm @ 800mA, 10V 6.3Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V 19 nC @ 10 V 15 nC @ 10 V 33 nC @ 10 V 31 nC @ 10 V 25 nC @ 10 V 52 nC @ 10 V 5 nC @ 10 V 5.5 nC @ 10 V 8 nC @ 10 V 11 nC @ 10 V 11 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 550 pF @ 25 V 690 pF @ 25 V 500 pF @ 25 V 1250 pF @ 25 V 1500 pF @ 25 V 880 pF @ 25 V 1850 pF @ 25 V 130 pF @ 25 V 150 pF @ 25 V 230 pF @ 25 V 350 pF @ 25 V 350 pF @ 25 V
FET Feature - - - - - - - - - - - -
Power Dissipation (Max) 35W (Tc) 39W (Tc) 35W (Tc) 47W (Tc) 51W (Tc) 43W (Tc) 56W (Tc) 16W (Tc) 16W (Tc) 20W (Tc) 28W (Tc) 28W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220F-3 TO-220F-3 TO-220F-3 TO-220F-3 TO-220F-3 TO-220F-3 TO-220F-3 TO-220F-3 TO-220F-3 TO-220F-3 TO-220F-3 TO-220F-3
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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