FQPF10N60C
  • Share:

onsemi FQPF10N60C

Manufacturer No:
FQPF10N60C
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FQPF10N60C Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 9.5A TO220F
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:730mOhm @ 4.75A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:57 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2040 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F-3
Package / Case:TO-220-3 Full Pack
0 Remaining View Similar

In Stock

$2.37
2

Please send RFQ , we will respond immediately.

Similar Products

Part Number FQPF10N60C FQPF12N60C   FQPF10N60CF   FQPF10N60CT   FQPF10N20C  
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Last Time Buy
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 200 V
Current - Continuous Drain (Id) @ 25°C 9.5A (Tc) 12A (Tc) 9A (Tc) 9.5A (Tc) 9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 730mOhm @ 4.75A, 10V 650mOhm @ 6A, 10V 800mOhm @ 4.5A, 10V 730mOhm @ 4.75A, 10V 360mOhm @ 4.75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 10 V 63 nC @ 10 V 57 nC @ 10 V 57 nC @ 10 V 26 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2040 pF @ 25 V 2290 pF @ 25 V 2040 pF @ 25 V 2040 pF @ 25 V 510 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 50W (Tc) 51W (Tc) 50W (Tc) 50W (Tc) 38W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220F-3 TO-220F-3 TO-220F-3 TO-220F-3 TO-220F-3
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

Related Product By Categories

TSM480P06CH X0G
TSM480P06CH X0G
Taiwan Semiconductor Corporation
MOSFET P-CHANNEL 60V 20A TO251
IXTA44P15T-TRL
IXTA44P15T-TRL
IXYS
MOSFET P-CH 150V 44A TO263
NVTFS6H850NTAG
NVTFS6H850NTAG
onsemi
MOSFET N-CH 80V 11A/68A 8WDFN
NVTFS5C670NLTAG
NVTFS5C670NLTAG
onsemi
MOSFET N-CH 60V 16A/70A 8WDFN
SUP50020EL-GE3
SUP50020EL-GE3
Vishay Siliconix
MOSFET N-CH 60V 120A TO220AB
DMN2053U-7
DMN2053U-7
Diodes Incorporated
MOSFET N-CH 20V 6.5A SOT23 T&R 3
IRFR4104TRLPBF
IRFR4104TRLPBF
Infineon Technologies
MOSFET N-CH 40V 42A DPAK
IPB80N06S2L11ATMA2
IPB80N06S2L11ATMA2
Infineon Technologies
MOSFET N-CH 55V 80A TO263-3
IPU04N03LA G
IPU04N03LA G
Infineon Technologies
MOSFET N-CH 25V 50A TO251-3
IXFR26N50Q
IXFR26N50Q
IXYS
MOSFET N-CH 500V 24A ISOPLUS247
SFT1423-E
SFT1423-E
onsemi
MOSFET N-CH 500V 2A TP
IRFR220,118
IRFR220,118
NXP USA Inc.
MOSFET N-CH 200V 4.8A DPAK

Related Product By Brand

MMSZ5249BT1G
MMSZ5249BT1G
onsemi
DIODE ZENER 19V 500MW SOD123
EMT1DXV6T1
EMT1DXV6T1
onsemi
TRANS 2PNP 60V 0.1A SOT563
NSBC143TPDXV6T5G
NSBC143TPDXV6T5G
onsemi
TRANS PREBIAS NPN/PNP SOT563
KSC3073OTU
KSC3073OTU
onsemi
TRANS NPN 30V 3A IPAK
KSB708OTU
KSB708OTU
onsemi
TRANS PNP 80V 7A TO220-3
FJPF5027TU
FJPF5027TU
onsemi
TRANS NPN 800V 3A TO220F-3
FDT86256
FDT86256
onsemi
MOSFET N-CH 150V 1.2A/3A SOT223
DM74ALS37AMX
DM74ALS37AMX
onsemi
IC GATE NAND 4CH 2-INP 14SOIC
SN74LS123ML1
SN74LS123ML1
onsemi
RETRIGGERABLE MONOSTABLE MULTIVI
NCP585DSN18T1G
NCP585DSN18T1G
onsemi
IC REG LINEAR 1.8V 300MA SOT23-5
NCV97400MW00R2G
NCV97400MW00R2G
onsemi
IC PMIC MULTI-OUTPUT 32QFNW
NM95HS01EM8
NM95HS01EM8
onsemi
IC ENCODER 8SO