FQP7P06
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onsemi FQP7P06

Manufacturer No:
FQP7P06
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FQP7P06 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 60V 7A TO220-3
Delivery:
Payment:
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:410mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.2 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:295 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):45W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number FQP7P06 FQP27P06   FQP47P06  
Manufacturer onsemi onsemi onsemi
Product Status Last Time Buy Active Active
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc) 27A (Tc) 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 410mOhm @ 3.5A, 10V 70mOhm @ 13.5A, 10V 26mOhm @ 23.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.2 nC @ 10 V 43 nC @ 10 V 110 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 295 pF @ 25 V 1400 pF @ 25 V 3600 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 45W (Tc) 120W (Tc) 160W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3

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