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| Part Number | FQP7N80C | FQP8N80C | FQP3N80C | FQP6N80C | FQP7N80 |
|---|---|---|---|---|---|
| Manufacturer | onsemi | onsemi | onsemi | onsemi | Fairchild Semiconductor |
| Product Status | Last Time Buy | Active | Obsolete | Active | Obsolete |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800 V | 800 V | 800 V | 800 V | 800 V |
| Current - Continuous Drain (Id) @ 25°C | 6.6A (Tc) | 8A (Tc) | 3A (Tc) | 5.5A (Tc) | 6.6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 1.9Ohm @ 3.3A, 10V | 1.55Ohm @ 4A, 10V | 4.8Ohm @ 1.5A, 10V | 2.5Ohm @ 2.75A, 10V | 1.5Ohm @ 3.3A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA | 5V @ 250µA | 5V @ 250µA | 5V @ 250µA | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V | 45 nC @ 10 V | 16.5 nC @ 10 V | 30 nC @ 10 V | 52 nC @ 10 V |
| Vgs (Max) | ±30V | ±30V | ±30V | ±30V | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1680 pF @ 25 V | 2050 pF @ 25 V | 705 pF @ 25 V | 1310 pF @ 25 V | 1850 pF @ 25 V |
| FET Feature | - | - | - | - | - |
| Power Dissipation (Max) | 167W (Tc) | 178W (Tc) | 107W (Tc) | 158W (Tc) | 167W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
