FQP7N20
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onsemi FQP7N20

Manufacturer No:
FQP7N20
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FQP7N20 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 6.6A TO220-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:690mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):63W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number FQP7N20 FQP7P20   FQP7N80   FQP7N20L   FQP7N40   FQP7N60   FQP4N20   FQP5N20   FQP7N10  
Manufacturer onsemi Fairchild Semiconductor Fairchild Semiconductor onsemi onsemi onsemi Fairchild Semiconductor onsemi onsemi
Product Status Last Time Buy Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel P-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V 800 V 200 V 400 V 600 V 200 V 200 V 100 V
Current - Continuous Drain (Id) @ 25°C 6.6A (Tc) 7.3A (Tc) 6.6A (Tc) 6.5A (Tc) 7A (Tc) 7.4A (Tc) 3.6A (Tc) 4.5A (Tc) 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 5V, 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 690mOhm @ 3.3A, 10V 690mOhm @ 3.65A, 10V 1.5Ohm @ 3.3A, 10V 750mOhm @ 3.25A, 10V 800mOhm @ 3.5A, 10V 1Ohm @ 3.7A, 10V 1.4Ohm @ 1.8A, 10V 1.2Ohm @ 2.25A, 10V 350mOhm @ 3.65A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 2V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V 25 nC @ 10 V 52 nC @ 10 V 9 nC @ 5 V 22 nC @ 10 V 38 nC @ 10 V 6.5 nC @ 10 V 7.5 nC @ 10 V 7.5 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±20V ±30V ±30V ±30V ±30V ±25V
Input Capacitance (Ciss) (Max) @ Vds 400 pF @ 25 V 770 pF @ 25 V 1850 pF @ 25 V 500 pF @ 25 V 780 pF @ 25 V 1430 pF @ 25 V 220 pF @ 25 V 270 pF @ 25 V 250 pF @ 25 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 63W (Tc) 90W (Tc) 167W (Tc) 63W (Tc) 98W (Tc) 142W (Tc) 45W (Tc) 52W (Tc) 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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