FQP6N90
  • Share:

onsemi FQP6N90

Manufacturer No:
FQP6N90
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FQP6N90 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 900V 5.8A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.9Ohm @ 2.9A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:52 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1880 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):167W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

-
571

Please send RFQ , we will respond immediately.

Similar Products

Part Number FQP6N90 FQP6N90C   FQP2N90   FQP3N90   FQP4N90   FQP5N90   FQP6N50   FQP6N60   FQP6N70   FQP6N80  
Manufacturer onsemi onsemi onsemi Fairchild Semiconductor Fairchild Semiconductor onsemi Fairchild Semiconductor onsemi Fairchild Semiconductor Fairchild Semiconductor
Product Status Obsolete Obsolete Last Time Buy Obsolete Obsolete Obsolete Obsolete Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 900 V 900 V 900 V 900 V 900 V 500 V 600 V 700 V 800 V
Current - Continuous Drain (Id) @ 25°C 5.8A (Tc) 6A (Tc) 2.2A (Tc) 3.6A (Tc) 4.2A (Tc) 5.4A (Tc) 5.5A (Tc) 6.2A (Tc) 6.2A (Tc) 5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.9Ohm @ 2.9A, 10V 2.3Ohm @ 3A, 10V 7.2Ohm @ 1.1A, 10V 4.25Ohm @ 1.8A, 10V 3.3Ohm @ 2.1A, 10V 2.3Ohm @ 2.7A, 10V 1.3Ohm @ 2.8A, 10V 1.5Ohm @ 3.1A, 10V 1.5Ohm @ 3.1A, 10V 1.95Ohm @ 2.9A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 52 nC @ 10 V 40 nC @ 10 V 15 nC @ 10 V 26 nC @ 10 V 30 nC @ 10 V 40 nC @ 10 V 22 nC @ 10 V 25 nC @ 10 V 40 nC @ 10 V 31 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1880 pF @ 25 V 1770 pF @ 25 V 500 pF @ 25 V 910 pF @ 25 V 1100 pF @ 25 V 1550 pF @ 25 V 790 pF @ 25 V 1000 pF @ 25 V 1400 pF @ 25 V 1500 pF @ 25 V
FET Feature - - - - - - - - - -
Power Dissipation (Max) 167W (Tc) 167W (Tc) 85W (Tc) 130W (Tc) 140W (Tc) 158W (Tc) 98W (Tc) 130W (Tc) 142W (Tc) 158W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

BUK6D56-60EX
BUK6D56-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 4A/11A 6DFN
DMN62D0SFD-7
DMN62D0SFD-7
Diodes Incorporated
MOSFET N-CH 60V 540MA 3DFN
STB6NK60ZT4
STB6NK60ZT4
STMicroelectronics
MOSFET N-CH 600V 6A D2PAK
PSMN1R8-40YLC,115
PSMN1R8-40YLC,115
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
IRFP260NPBF
IRFP260NPBF
Infineon Technologies
MOSFET N-CH 200V 50A TO247AC
AUIRF5210STRL
AUIRF5210STRL
Infineon Technologies
MOSFET P-CH 100V 38A D2PAK
SQJA94EP-T1_GE3
SQJA94EP-T1_GE3
Vishay Siliconix
MOSFET N-CH 80V 46A PPAK SO-8
SQD40061EL-T4_GE3
SQD40061EL-T4_GE3
Vishay Siliconix
P-CHANNEL 40-V (D-S) 175C MOSFET
IRF644PBF-BE3
IRF644PBF-BE3
Vishay Siliconix
MOSFET N-CH 250V 14A TO220AB
NVBG060N090SC1
NVBG060N090SC1
onsemi
MOSFET N-CH 900V 5.8/44A D2PAK-7
NVGS3443T1G
NVGS3443T1G
onsemi
SINGLE P-CHANNEL POWER MOSFET -2
BUK9E1R6-30E,127
BUK9E1R6-30E,127
NXP USA Inc.
MOSFET N-CH 30V 120A I2PAK

Related Product By Brand

NSVBAS21TMR6T2G
NSVBAS21TMR6T2G
onsemi
DIODE SWITCHING 250V SC-74
SS25FA
SS25FA
onsemi
DIODE SCHOTTKY 50V 2A SOD123FA
FCP099N65S3
FCP099N65S3
onsemi
MOSFET N-CH 650V 30A TO220-3
NDT451AN_J23Z
NDT451AN_J23Z
onsemi
MOSFET N-CH 30V 7.2A SOT23-3
VN2410LZL1G
VN2410LZL1G
onsemi
MOSFET N-CH 240V 200MA TO92-3
74ABT245CMTCX
74ABT245CMTCX
onsemi
IC TXRX NON-INVERT 5.5V 20TSSOP
NC7NZ04K8X
NC7NZ04K8X
onsemi
IC INVERTER 3CH 3-INP US8
MC74HC02AFR1
MC74HC02AFR1
onsemi
IC GATE NOR 4CH 2-INP SOEIAJ-14
N02L63W2AB25I
N02L63W2AB25I
onsemi
IC SRAM 2MBIT PARALLEL 48BGA
ADP3415LRM-REEL
ADP3415LRM-REEL
onsemi
IC MOSFET DVR DUAL BOOT 10MSOP
CS1112YDWFR24
CS1112YDWFR24
onsemi
IC PWR DRIVER N-CHAN 1:1 24SOIC
H11AA3SM
H11AA3SM
onsemi
OPTOISO 7.5KV TRANS W/BASE 6SMD