FQP6N90
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onsemi FQP6N90

Manufacturer No:
FQP6N90
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FQP6N90 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 900V 5.8A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.9Ohm @ 2.9A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:52 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1880 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):167W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number FQP6N90 FQP6N90C   FQP2N90   FQP3N90   FQP4N90   FQP5N90   FQP6N50   FQP6N60   FQP6N70   FQP6N80  
Manufacturer onsemi onsemi onsemi Fairchild Semiconductor Fairchild Semiconductor onsemi Fairchild Semiconductor onsemi Fairchild Semiconductor Fairchild Semiconductor
Product Status Obsolete Obsolete Last Time Buy Obsolete Obsolete Obsolete Obsolete Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 900 V 900 V 900 V 900 V 900 V 500 V 600 V 700 V 800 V
Current - Continuous Drain (Id) @ 25°C 5.8A (Tc) 6A (Tc) 2.2A (Tc) 3.6A (Tc) 4.2A (Tc) 5.4A (Tc) 5.5A (Tc) 6.2A (Tc) 6.2A (Tc) 5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.9Ohm @ 2.9A, 10V 2.3Ohm @ 3A, 10V 7.2Ohm @ 1.1A, 10V 4.25Ohm @ 1.8A, 10V 3.3Ohm @ 2.1A, 10V 2.3Ohm @ 2.7A, 10V 1.3Ohm @ 2.8A, 10V 1.5Ohm @ 3.1A, 10V 1.5Ohm @ 3.1A, 10V 1.95Ohm @ 2.9A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 52 nC @ 10 V 40 nC @ 10 V 15 nC @ 10 V 26 nC @ 10 V 30 nC @ 10 V 40 nC @ 10 V 22 nC @ 10 V 25 nC @ 10 V 40 nC @ 10 V 31 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1880 pF @ 25 V 1770 pF @ 25 V 500 pF @ 25 V 910 pF @ 25 V 1100 pF @ 25 V 1550 pF @ 25 V 790 pF @ 25 V 1000 pF @ 25 V 1400 pF @ 25 V 1500 pF @ 25 V
FET Feature - - - - - - - - - -
Power Dissipation (Max) 167W (Tc) 167W (Tc) 85W (Tc) 130W (Tc) 140W (Tc) 158W (Tc) 98W (Tc) 130W (Tc) 142W (Tc) 158W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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