FQP6N80C
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onsemi FQP6N80C

Manufacturer No:
FQP6N80C
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FQP6N80C Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 5.5A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.5Ohm @ 2.75A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1310 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):158W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number FQP6N80C FQP7N80C   FQP8N80C   FQP6N90C   FQP3N80C   FQP6N40C   FQP6N50C   FQP6N60C   FQP6N80  
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi Fairchild Semiconductor onsemi Fairchild Semiconductor
Product Status Active Last Time Buy Active Obsolete Obsolete Last Time Buy Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V 900 V 800 V 400 V 500 V 600 V 800 V
Current - Continuous Drain (Id) @ 25°C 5.5A (Tc) 6.6A (Tc) 8A (Tc) 6A (Tc) 3A (Tc) 6A (Tc) 5.5A (Tc) 5.5A (Tc) 5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 2.5Ohm @ 2.75A, 10V 1.9Ohm @ 3.3A, 10V 1.55Ohm @ 4A, 10V 2.3Ohm @ 3A, 10V 4.8Ohm @ 1.5A, 10V 1Ohm @ 3A, 10V 1.2Ohm @ 2.8A, 10V 2Ohm @ 2.75A, 10V 1.95Ohm @ 2.9A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V 35 nC @ 10 V 45 nC @ 10 V 40 nC @ 10 V 16.5 nC @ 10 V 20 nC @ 10 V 25 nC @ 10 V 20 nC @ 10 V 31 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1310 pF @ 25 V 1680 pF @ 25 V 2050 pF @ 25 V 1770 pF @ 25 V 705 pF @ 25 V 625 pF @ 25 V 700 pF @ 25 V 810 pF @ 25 V 1500 pF @ 25 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 158W (Tc) 167W (Tc) 178W (Tc) 167W (Tc) 107W (Tc) 73W (Tc) 98W (Tc) 125W (Tc) 158W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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