FQP6N60C
  • Share:

onsemi FQP6N60C

Manufacturer No:
FQP6N60C
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FQP6N60C Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 5.5A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2Ohm @ 2.75A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:810 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$1.64
536

Please send RFQ , we will respond immediately.

Similar Products

Part Number FQP6N60C FQP8N60C   FQP6N80C   FQP6N90C   FQP2N60C   FQP3N60C   FQP5N60C   FQP6N40C   FQP6N50C   FQP6N60  
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi Fairchild Semiconductor onsemi
Product Status Obsolete Obsolete Active Obsolete Obsolete Obsolete Obsolete Last Time Buy Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 800 V 900 V 600 V 600 V 600 V 400 V 500 V 600 V
Current - Continuous Drain (Id) @ 25°C 5.5A (Tc) 7.5A (Tc) 5.5A (Tc) 6A (Tc) 2A (Tc) 3A (Tc) 4.5A (Tc) 6A (Tc) 5.5A (Tc) 6.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 2.75A, 10V 1.2Ohm @ 3.75A, 10V 2.5Ohm @ 2.75A, 10V 2.3Ohm @ 3A, 10V 4.7Ohm @ 1A, 10V 3.4Ohm @ 1.5A, 10V 2.5Ohm @ 2.25A, 10V 1Ohm @ 3A, 10V 1.2Ohm @ 2.8A, 10V 1.5Ohm @ 3.1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V 36 nC @ 10 V 30 nC @ 10 V 40 nC @ 10 V 12 nC @ 10 V 14 nC @ 10 V 19 nC @ 10 V 20 nC @ 10 V 25 nC @ 10 V 25 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 810 pF @ 25 V 1255 pF @ 25 V 1310 pF @ 25 V 1770 pF @ 25 V 235 pF @ 25 V 565 pF @ 25 V 670 pF @ 25 V 625 pF @ 25 V 700 pF @ 25 V 1000 pF @ 25 V
FET Feature - - - - - - - - - -
Power Dissipation (Max) 125W (Tc) 147W (Tc) 158W (Tc) 167W (Tc) 54W (Tc) 75W (Tc) 100W (Tc) 73W (Tc) 98W (Tc) 130W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

IRFS9N60ATRRPBF
IRFS9N60ATRRPBF
Vishay Siliconix
MOSFET N-CH 600V 9.2A D2PAK
PMPB33XP,115
PMPB33XP,115
Nexperia USA Inc.
MOSFET P-CH 20V 5.5A DFN2020MD-6
NTR4003NT3G
NTR4003NT3G
onsemi
MOSFET N-CH 30V 500MA SOT23-3
BUK7613-100E,118
BUK7613-100E,118
Nexperia USA Inc.
MOSFET N-CH 100V 72A D2PAK
STS8N6LF6AG
STS8N6LF6AG
STMicroelectronics
MOSFET N-CHANNEL 60V 8A 8SO
IXTH1N200P3HV
IXTH1N200P3HV
IXYS
MOSFET N-CH 2000V 1A TO247HV
NVTFWS002N04CTAG
NVTFWS002N04CTAG
onsemi
MOSFET N-CH 40V 27A/136A 8WDFN
TK6A60W,S4VX
TK6A60W,S4VX
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 6.2A TO220SIS
IRF7241TR
IRF7241TR
Infineon Technologies
MOSFET P-CH 40V 6.2A 8SO
IRF6215PBF
IRF6215PBF
Infineon Technologies
MOSFET P-CH 150V 13A TO220AB
STB12NM50FDT4
STB12NM50FDT4
STMicroelectronics
MOSFET N-CH 500V 12A D2PAK
2SK3708
2SK3708
onsemi
MOSFET N-CH 100V 30A TO220ML

Related Product By Brand

1N6281AG
1N6281AG
onsemi
TVS DIODE 23.1VWM 37.5VC SOT23-5
LV5011MDGEVB
LV5011MDGEVB
onsemi
EVAL BOARD LV5011MDG
LC717A10ARGPGEVB
LC717A10ARGPGEVB
onsemi
EVAL BOARD CAP-DGTL CONV LSI
MURA115T3
MURA115T3
onsemi
DIODE GEN PURP 150V 2A SMA
FJPF5200OTU
FJPF5200OTU
onsemi
TRANS NPN 250V 17A TO220F-3
FSB6714
FSB6714
onsemi
TRANS NPN 30V SOT23-3
NTHL080N120SC1
NTHL080N120SC1
onsemi
SILICON CARBIDE MOSFET, N-CHANNE
NTD4860NAT4G
NTD4860NAT4G
onsemi
MOSFET N-CH 25V 10.4A/65A DPAK
MC100E112FNR2
MC100E112FNR2
onsemi
IC DRIVER QUAD ECL N-INV 28PLCC
CAT24C64LI-G
CAT24C64LI-G
onsemi
IC EEPROM 64KBIT I2C 1MHZ 8DIP
CAT24C01VP2I-GT3
CAT24C01VP2I-GT3
onsemi
IC EEPROM 1KBIT I2C 400KHZ 8TDFN
MT9V034W00STMC13CC1-750
MT9V034W00STMC13CC1-750
onsemi
IMAGE SENSOR CMOS VGA