FQP6N60
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onsemi FQP6N60

Manufacturer No:
FQP6N60
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FQP6N60 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 6.2A TO220-3
Delivery:
Payment:
iso14001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:6.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.5Ohm @ 3.1A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):130W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number FQP6N60 FQP6N80   FQP6N60C   FQP6N70   FQP7N60   FQP6N90   FQP1N60   FQP2N60   FQP3N60   FQP4N60   FQP6N50  
Manufacturer onsemi Fairchild Semiconductor onsemi Fairchild Semiconductor onsemi onsemi onsemi Fairchild Semiconductor Fairchild Semiconductor onsemi Fairchild Semiconductor
Product Status Obsolete Obsolete Obsolete Active Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 800 V 600 V 700 V 600 V 900 V 600 V 600 V 600 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 6.2A (Tc) 5.8A (Tc) 5.5A (Tc) 6.2A (Tc) 7.4A (Tc) 5.8A (Tc) 1.2A (Tc) 2.4A (Tc) 3A (Tc) 4.4A (Tc) 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 3.1A, 10V 1.95Ohm @ 2.9A, 10V 2Ohm @ 2.75A, 10V 1.5Ohm @ 3.1A, 10V 1Ohm @ 3.7A, 10V 1.9Ohm @ 2.9A, 10V 11.5Ohm @ 600mA, 10V 4.7Ohm @ 1.2A, 10V 3.6Ohm @ 1.5A, 10V 2.2Ohm @ 2.2A, 10V 1.3Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 4V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V 31 nC @ 10 V 20 nC @ 10 V 40 nC @ 10 V 38 nC @ 10 V 52 nC @ 10 V 6 nC @ 10 V 11 nC @ 10 V 13 nC @ 10 V 20 nC @ 10 V 22 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 25 V 1500 pF @ 25 V 810 pF @ 25 V 1400 pF @ 25 V 1430 pF @ 25 V 1880 pF @ 25 V 150 pF @ 25 V 350 pF @ 25 V 450 pF @ 25 V 670 pF @ 25 V 790 pF @ 25 V
FET Feature - - - - - - - - - - -
Power Dissipation (Max) 130W (Tc) 158W (Tc) 125W (Tc) 142W (Tc) 142W (Tc) 167W (Tc) 40W (Tc) 64W (Tc) 75W (Tc) 106W (Tc) 98W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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