FQP5N20
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onsemi FQP5N20

Manufacturer No:
FQP5N20
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FQP5N20 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 4.5A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 2.25A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:270 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):52W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number FQP5N20 FQP5N20L   FQP5N30   FQP5N80   FQP7N20   FQP5P20   FQP5N40   FQP5N90   FQP4N20  
Manufacturer onsemi Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor onsemi Fairchild Semiconductor Fairchild Semiconductor onsemi Fairchild Semiconductor
Product Status Obsolete Obsolete Obsolete Obsolete Last Time Buy Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel P-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V 300 V 800 V 200 V 200 V 400 V 900 V 200 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc) 4.5A (Tc) 5.4A (Tc) 4.8A (Tc) 6.6A (Tc) 4.8A (Tc) 4.5A (Tc) 5.4A (Tc) 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 5V, 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 2.25A, 10V 1.2Ohm @ 2.25A, 10V 900mOhm @ 2.7A, 10V 2.6Ohm @ 2.4A, 10V 690mOhm @ 3.3A, 10V 1.4Ohm @ 2.4A, 10V 1.6Ohm @ 2.25A, 10V 2.3Ohm @ 2.7A, 10V 1.4Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 2V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.5 nC @ 10 V 6.2 nC @ 5 V 13 nC @ 10 V 33 nC @ 10 V 10 nC @ 10 V 13 nC @ 10 V 13 nC @ 10 V 40 nC @ 10 V 6.5 nC @ 10 V
Vgs (Max) ±30V ±20V ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 270 pF @ 25 V 325 pF @ 25 V 430 pF @ 25 V 1250 pF @ 25 V 400 pF @ 25 V 430 pF @ 25 V 460 pF @ 25 V 1550 pF @ 25 V 220 pF @ 25 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 52W (Tc) 52W (Tc) 70W (Tc) 140W (Tc) 63W (Tc) 75W (Tc) 70W (Tc) 158W (Tc) 45W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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