FQP4N80
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onsemi FQP4N80

Manufacturer No:
FQP4N80
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FQP4N80 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 3.9A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.6Ohm @ 1.95A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:880 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):130W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number FQP4N80 FQP5N80   FQP6N80   FQP4N90   FQP7N80   FQP2N80   FQP3N80   FQP4N20   FQP4N60  
Manufacturer onsemi Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor onsemi Fairchild Semiconductor onsemi
Product Status Last Time Buy Obsolete Obsolete Obsolete Obsolete Active Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V 900 V 800 V 800 V 800 V 200 V 600 V
Current - Continuous Drain (Id) @ 25°C 3.9A (Tc) 4.8A (Tc) 5.8A (Tc) 4.2A (Tc) 6.6A (Tc) 2.4A (Tc) 3A (Tc) 3.6A (Tc) 4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 3.6Ohm @ 1.95A, 10V 2.6Ohm @ 2.4A, 10V 1.95Ohm @ 2.9A, 10V 3.3Ohm @ 2.1A, 10V 1.5Ohm @ 3.3A, 10V 6.3Ohm @ 1.2A, 10V 5Ohm @ 1.5A, 10V 1.4Ohm @ 1.8A, 10V 2.2Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V 33 nC @ 10 V 31 nC @ 10 V 30 nC @ 10 V 52 nC @ 10 V 15 nC @ 10 V 19 nC @ 10 V 6.5 nC @ 10 V 20 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 880 pF @ 25 V 1250 pF @ 25 V 1500 pF @ 25 V 1100 pF @ 25 V 1850 pF @ 25 V 550 pF @ 25 V 690 pF @ 25 V 220 pF @ 25 V 670 pF @ 25 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 130W (Tc) 140W (Tc) 158W (Tc) 140W (Tc) 167W (Tc) 85W (Tc) 107W (Tc) 45W (Tc) 106W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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