FQP3N80
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onsemi FQP3N80

Manufacturer No:
FQP3N80
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FQP3N80 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 3A TO220-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:690 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):107W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number FQP3N80 FQP4N80   FQP3N90   FQP5N80   FQP6N80   FQP7N80   FQP3N80C   FQP2N80   FQP3N30   FQP3N40   FQP3N60  
Manufacturer onsemi onsemi Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor onsemi Fairchild Semiconductor onsemi onsemi Fairchild Semiconductor
Product Status Obsolete Last Time Buy Obsolete Obsolete Obsolete Obsolete Obsolete Active Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 900 V 800 V 800 V 800 V 800 V 800 V 300 V 400 V 600 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc) 3.9A (Tc) 3.6A (Tc) 4.8A (Tc) 5.8A (Tc) 6.6A (Tc) 3A (Tc) 2.4A (Tc) 3.2A (Tc) 2.5A (Tc) 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 1.5A, 10V 3.6Ohm @ 1.95A, 10V 4.25Ohm @ 1.8A, 10V 2.6Ohm @ 2.4A, 10V 1.95Ohm @ 2.9A, 10V 1.5Ohm @ 3.3A, 10V 4.8Ohm @ 1.5A, 10V 6.3Ohm @ 1.2A, 10V 2.2Ohm @ 1.6A, 10V 3.4Ohm @ 1.25A, 10V 3.6Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V 25 nC @ 10 V 26 nC @ 10 V 33 nC @ 10 V 31 nC @ 10 V 52 nC @ 10 V 16.5 nC @ 10 V 15 nC @ 10 V 7 nC @ 10 V 7.5 nC @ 10 V 13 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 690 pF @ 25 V 880 pF @ 25 V 910 pF @ 25 V 1250 pF @ 25 V 1500 pF @ 25 V 1850 pF @ 25 V 705 pF @ 25 V 550 pF @ 25 V 230 pF @ 25 V 230 pF @ 25 V 450 pF @ 25 V
FET Feature - - - - - - - - - - -
Power Dissipation (Max) 107W (Tc) 130W (Tc) 130W (Tc) 140W (Tc) 158W (Tc) 167W (Tc) 107W (Tc) 85W (Tc) 55W (Tc) 55W (Tc) 75W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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