FQP3N40
  • Share:

onsemi FQP3N40

Manufacturer No:
FQP3N40
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FQP3N40 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 400V 2.5A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):400 V
Current - Continuous Drain (Id) @ 25°C:2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.4Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:230 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):55W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

-
184

Please send RFQ , we will respond immediately.

Similar Products

Part Number FQP3N40 FQP3N60   FQP3N90   FQP5N40   FQP7N40   FQP3N80   FQP2N40   FQP3N30  
Manufacturer onsemi Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V 600 V 900 V 400 V 400 V 800 V 400 V 300 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Tc) 3A (Tc) 3.6A (Tc) 4.5A (Tc) 7A (Tc) 3A (Tc) 1.8A (Tc) 3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 3.4Ohm @ 1.25A, 10V 3.6Ohm @ 1.5A, 10V 4.25Ohm @ 1.8A, 10V 1.6Ohm @ 2.25A, 10V 800mOhm @ 3.5A, 10V 5Ohm @ 1.5A, 10V 5.8Ohm @ 900mA, 10V 2.2Ohm @ 1.6A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.5 nC @ 10 V 13 nC @ 10 V 26 nC @ 10 V 13 nC @ 10 V 22 nC @ 10 V 19 nC @ 10 V 5.5 nC @ 10 V 7 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 230 pF @ 25 V 450 pF @ 25 V 910 pF @ 25 V 460 pF @ 25 V 780 pF @ 25 V 690 pF @ 25 V 150 pF @ 25 V 230 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 55W (Tc) 75W (Tc) 130W (Tc) 70W (Tc) 98W (Tc) 107W (Tc) 40W (Tc) 55W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

FDS8813NZ
FDS8813NZ
onsemi
MOSFET N-CH 30V 18.5A 8SOIC
SPD04P10PLGBTMA1
SPD04P10PLGBTMA1
Infineon Technologies
MOSFET P-CH 100V 4.2A TO252-3
FCU360N65S3R0
FCU360N65S3R0
onsemi
MOSFET N-CH 600V IPAK
TK9A55DA(STA4,Q,M)
TK9A55DA(STA4,Q,M)
Toshiba Semiconductor and Storage
MOSFET N-CH 550V 8.5A TO220SIS
SIHG22N65E-GE3
SIHG22N65E-GE3
Vishay Siliconix
MOSFET N-CH 650V 22A TO247AC
IXFN24N100
IXFN24N100
IXYS
MOSFET N-CH 1KV 24A SOT-227B
IXTA200N075T
IXTA200N075T
IXYS
MOSFET N-CH 75V 200A TO263
SI5475DDC-T1-GE3
SI5475DDC-T1-GE3
Vishay Siliconix
MOSFET P-CH 12V 6A 1206-8
IPI90N06S404AKSA1
IPI90N06S404AKSA1
Infineon Technologies
MOSFET N-CH 60V 90A TO262-3
PSMN017-30LL,115
PSMN017-30LL,115
NXP USA Inc.
MOSFET N-CH 30V 15A 8DFN
PMR400UN,115
PMR400UN,115
NXP USA Inc.
MOSFET N-CH 30V 800MA SC75
DMP3065LVT-7
DMP3065LVT-7
Diodes Incorporated
MOSFET P-CH 30V 4.9A TSOT-26

Related Product By Brand

P6SMB20AT3
P6SMB20AT3
onsemi
TVS ZENER UNIDIR 600W 20V SMB
NCP1602BOOSTGEVB
NCP1602BOOSTGEVB
onsemi
EVAL BOARD NCP1602BOOSTG
MBRM110ET1G
MBRM110ET1G
onsemi
DIODE SCHOTTKY 10V 1A POWERMITE
MUR210RLG
MUR210RLG
onsemi
DIODE GEN PURP 100V 2A AXIAL
MBRM120LT3H
MBRM120LT3H
onsemi
DIODE SCHOTTKY
BU406
BU406
onsemi
TRANS NPN 200V 7A TO220-3
FDC3512_F095
FDC3512_F095
onsemi
MOSFET N-CH 80V 3A SUPERSOT6
NCV272DR2G
NCV272DR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
MC100EP451MNG
MC100EP451MNG
onsemi
IC FF D-TYPE SNGL 6BIT 32QFN
MC10H351PG
MC10H351PG
onsemi
IC TRNSLTR UNIDIRECTIONAL 20DIP
NCL30388A1DR2G
NCL30388A1DR2G
onsemi
IC LED DRVR CTRL DIM 4.7MA 7SOIC
H11A817W
H11A817W
onsemi
OPTOISO 5.3KV TRANSISTOR 4DIP