FQP2P40-F080
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onsemi FQP2P40-F080

Manufacturer No:
FQP2P40-F080
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FQP2P40-F080 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 400V 2A TO220-3
Delivery:
Payment:
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):400 V
Current - Continuous Drain (Id) @ 25°C:2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):63W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number FQP2P40-F080 FQP2N40-F080  
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V 400 V
Current - Continuous Drain (Id) @ 25°C 2A (Tc) 1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 6.5Ohm @ 1A, 10V 5.8Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V 5.5 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 25 V 150 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 63W (Tc) 40W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3

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