FQP2N90
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onsemi FQP2N90

Manufacturer No:
FQP2N90
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FQP2N90 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 900V 2.2A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7.2Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):85W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number FQP2N90 FQP2NA90   FQP3N90   FQP4N90   FQP5N90   FQP6N90   FQP2N30   FQP2N40   FQP2N50   FQP2N60   FQP2N80  
Manufacturer onsemi Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor onsemi onsemi onsemi onsemi Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor
Product Status Last Time Buy Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 900 V 900 V 900 V 900 V 900 V 300 V 400 V 500 V 600 V 800 V
Current - Continuous Drain (Id) @ 25°C 2.2A (Tc) 2.8A (Tc) 3.6A (Tc) 4.2A (Tc) 5.4A (Tc) 5.8A (Tc) 2.1A (Tc) 1.8A (Tc) 2.1A (Tc) 2.4A (Tc) 2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 7.2Ohm @ 1.1A, 10V 5.8Ohm @ 1.4A, 10V 4.25Ohm @ 1.8A, 10V 3.3Ohm @ 2.1A, 10V 2.3Ohm @ 2.7A, 10V 1.9Ohm @ 2.9A, 10V 3.7Ohm @ 1.05A, 10V 5.8Ohm @ 900mA, 10V 5.3Ohm @ 1.05A, 10V 4.7Ohm @ 1.2A, 10V 6.3Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V 20 nC @ 10 V 26 nC @ 10 V 30 nC @ 10 V 40 nC @ 10 V 52 nC @ 10 V 5 nC @ 10 V 5.5 nC @ 10 V 8 nC @ 10 V 11 nC @ 10 V 15 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 500 pF @ 25 V 680 pF @ 25 V 910 pF @ 25 V 1100 pF @ 25 V 1550 pF @ 25 V 1880 pF @ 25 V 130 pF @ 25 V 150 pF @ 25 V 230 pF @ 25 V 350 pF @ 25 V 550 pF @ 25 V
FET Feature - - - - - - - - - - -
Power Dissipation (Max) 85W (Tc) 107W (Tc) 130W (Tc) 140W (Tc) 158W (Tc) 167W (Tc) 40W (Tc) 40W (Tc) 55W (Tc) 64W (Tc) 85W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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