FQP2N40
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onsemi FQP2N40

Manufacturer No:
FQP2N40
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FQP2N40 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 400V 1.8A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):400 V
Current - Continuous Drain (Id) @ 25°C:1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5.8Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:150 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number FQP2N40 FQP2N50   FQP2N60   FQP2N80   FQP2N90   FQP5N40   FQP3N40   FQP2P40   FQP7N40   FQP2N30  
Manufacturer onsemi Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor onsemi Fairchild Semiconductor onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Active Last Time Buy Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel P-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V 500 V 600 V 800 V 900 V 400 V 400 V 400 V 400 V 300 V
Current - Continuous Drain (Id) @ 25°C 1.8A (Tc) 2.1A (Tc) 2.4A (Tc) 2.4A (Tc) 2.2A (Tc) 4.5A (Tc) 2.5A (Tc) 2A (Tc) 7A (Tc) 2.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 5.8Ohm @ 900mA, 10V 5.3Ohm @ 1.05A, 10V 4.7Ohm @ 1.2A, 10V 6.3Ohm @ 1.2A, 10V 7.2Ohm @ 1.1A, 10V 1.6Ohm @ 2.25A, 10V 3.4Ohm @ 1.25A, 10V 6.5Ohm @ 1A, 10V 800mOhm @ 3.5A, 10V 3.7Ohm @ 1.05A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 4V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.5 nC @ 10 V 8 nC @ 10 V 11 nC @ 10 V 15 nC @ 10 V 15 nC @ 10 V 13 nC @ 10 V 7.5 nC @ 10 V 13 nC @ 10 V 22 nC @ 10 V 5 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 150 pF @ 25 V 230 pF @ 25 V 350 pF @ 25 V 550 pF @ 25 V 500 pF @ 25 V 460 pF @ 25 V 230 pF @ 25 V 350 pF @ 25 V 780 pF @ 25 V 130 pF @ 25 V
FET Feature - - - - - - - - - -
Power Dissipation (Max) 40W (Tc) 55W (Tc) 64W (Tc) 85W (Tc) 85W (Tc) 70W (Tc) 55W (Tc) 63W (Tc) 98W (Tc) 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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