FQP2N30
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onsemi FQP2N30

Manufacturer No:
FQP2N30
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FQP2N30 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 300V 2.1A TO220-3
Delivery:
Payment:
iso14001
iso45001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):300 V
Current - Continuous Drain (Id) @ 25°C:2.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.7Ohm @ 1.05A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:130 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number FQP2N30 FQP2N50   FQP5N30   FQP2N60   FQP2N80   FQP2N90   FQP3N30   FQP2N40   FQP22N30  
Manufacturer onsemi Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Active Last Time Buy Obsolete Obsolete Last Time Buy
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V 500 V 300 V 600 V 800 V 900 V 300 V 400 V 300 V
Current - Continuous Drain (Id) @ 25°C 2.1A (Tc) 2.1A (Tc) 5.4A (Tc) 2.4A (Tc) 2.4A (Tc) 2.2A (Tc) 3.2A (Tc) 1.8A (Tc) 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 3.7Ohm @ 1.05A, 10V 5.3Ohm @ 1.05A, 10V 900mOhm @ 2.7A, 10V 4.7Ohm @ 1.2A, 10V 6.3Ohm @ 1.2A, 10V 7.2Ohm @ 1.1A, 10V 2.2Ohm @ 1.6A, 10V 5.8Ohm @ 900mA, 10V 160mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5 nC @ 10 V 8 nC @ 10 V 13 nC @ 10 V 11 nC @ 10 V 15 nC @ 10 V 15 nC @ 10 V 7 nC @ 10 V 5.5 nC @ 10 V 60 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 130 pF @ 25 V 230 pF @ 25 V 430 pF @ 25 V 350 pF @ 25 V 550 pF @ 25 V 500 pF @ 25 V 230 pF @ 25 V 150 pF @ 25 V 2200 pF @ 25 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 40W (Tc) 55W (Tc) 70W (Tc) 64W (Tc) 85W (Tc) 85W (Tc) 55W (Tc) 40W (Tc) 170W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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