FQP19N20C
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onsemi FQP19N20C

Manufacturer No:
FQP19N20C
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FQP19N20C Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 19A TO220-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:19A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:170mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:53 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1080 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):139W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number FQP19N20C FQP19N20L   FQP10N20C   FQP19N20  
Manufacturer onsemi Fairchild Semiconductor onsemi onsemi
Product Status Last Time Buy Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 19A (Tc) 21A (Tc) 9.5A (Tc) 19.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 5V, 10V 10V 10V
Rds On (Max) @ Id, Vgs 170mOhm @ 9.5A, 10V 140mOhm @ 10.5A, 10V 360mOhm @ 4.75A, 10V 150mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 2V @ 250µA 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 53 nC @ 10 V 35 nC @ 5 V 26 nC @ 10 V 40 nC @ 10 V
Vgs (Max) ±30V ±20V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1080 pF @ 25 V 2200 pF @ 25 V 510 pF @ 25 V 1600 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 139W (Tc) 140W (Tc) 72W (Tc) 140W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3

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