FQP19N10
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onsemi FQP19N10

Manufacturer No:
FQP19N10
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FQP19N10 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 19A TO220-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:19A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:100mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:780 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):75W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number FQP19N10 FQP19N10L   FQP19N20   FQP13N10  
Manufacturer onsemi Fairchild Semiconductor onsemi onsemi
Product Status Obsolete Obsolete Obsolete Last Time Buy
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 200 V 100 V
Current - Continuous Drain (Id) @ 25°C 19A (Tc) 19A (Tc) 19.4A (Tc) 12.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 5V, 10V 10V 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 9.5A, 10V 100mOhm @ 9.5A, 10V 150mOhm @ 9.7A, 10V 180mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 2V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V 18 nC @ 5 V 40 nC @ 10 V 16 nC @ 10 V
Vgs (Max) ±25V ±20V ±30V ±25V
Input Capacitance (Ciss) (Max) @ Vds 780 pF @ 25 V 870 pF @ 25 V 1600 pF @ 25 V 450 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 75W (Tc) 75W (Tc) 140W (Tc) 65W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3

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