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| Part Number | FQP17P10 | FQP12P10 |
|---|---|---|
| Manufacturer | onsemi | onsemi |
| Product Status | Active | Obsolete |
| FET Type | P-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 16.5A (Tc) | 11.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 8.25A, 10V | 290mOhm @ 5.75A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V | 27 nC @ 10 V |
| Vgs (Max) | ±30V | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 25 V | 800 pF @ 25 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 100W (Tc) | 75W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Supplier Device Package | TO-220-3 | TO-220-3 |
| Package / Case | TO-220-3 | TO-220-3 |
