FQP16N25
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onsemi FQP16N25

Manufacturer No:
FQP16N25
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FQP16N25 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 250V 16A TO220-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:230mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1200 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):142W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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$1.76
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Similar Products

Part Number FQP16N25 FQP6N25   FQP16N25C   FQP16N15  
Manufacturer onsemi Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor
Product Status Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V 250 V 250 V 150 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc) 5.5A (Tc) 15.6A (Tc) 16.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 230mOhm @ 8A, 10V 1Ohm @ 2.75A, 10V 270mOhm @ 7.8A, 10V 160mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V 8.5 nC @ 10 V 53.5 nC @ 10 V 30 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 25 V 300 pF @ 25 V 1080 pF @ 25 V 910 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 142W (Tc) 63W (Tc) 139W (Tc) 108W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3

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