FQP13N50
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onsemi FQP13N50

Manufacturer No:
FQP13N50
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FQP13N50 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 12.5A TO220-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:12.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:430mOhm @ 6.25A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2300 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):170W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number FQP13N50 FQP13N50C   FQP1N50   FQP13N10  
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Not For New Designs Obsolete Last Time Buy
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V 100 V
Current - Continuous Drain (Id) @ 25°C 12.5A (Tc) 13A (Tc) 1.4A (Tc) 12.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 430mOhm @ 6.25A, 10V 480mOhm @ 6.5A, 10V 9Ohm @ 700mA, 10V 180mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 4V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V 56 nC @ 10 V 5.5 nC @ 10 V 16 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2300 pF @ 25 V 2055 pF @ 25 V 150 pF @ 25 V 450 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 170W (Tc) 195W (Tc) 40W (Tc) 65W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3

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