FQP13N10L
  • Share:

onsemi FQP13N10L

Manufacturer No:
FQP13N10L
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FQP13N10L Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 12.8A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:12.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:180mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:520 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):65W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$1.30
747

Please send RFQ , we will respond immediately.

Similar Products

Part Number FQP13N10L FQP19N10L   FQP33N10L   FQP13N10  
Manufacturer onsemi Fairchild Semiconductor onsemi onsemi
Product Status Last Time Buy Obsolete Obsolete Last Time Buy
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 12.8A (Tc) 19A (Tc) 33A (Tc) 12.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V 5V, 10V 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 6.4A, 10V 100mOhm @ 9.5A, 10V 52mOhm @ 16.5A, 10V 180mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA 2V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 5 V 18 nC @ 5 V 40 nC @ 5 V 16 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±25V
Input Capacitance (Ciss) (Max) @ Vds 520 pF @ 25 V 870 pF @ 25 V 1630 pF @ 25 V 450 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 65W (Tc) 75W (Tc) 127W (Tc) 65W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

IRLS640A
IRLS640A
onsemi
MOSFET N-CH 200V 9.8A TO220F
2SJ687-ZK-E2-AY
2SJ687-ZK-E2-AY
Renesas Electronics America Inc
SMALL SIGNAL N-CHANNEL MOSFET
2SK1419
2SK1419
onsemi
N-CHANNEL POWER MOSFET
IPD90P03P4L04ATMA1
IPD90P03P4L04ATMA1
Infineon Technologies
MOSFET P-CH 30V 90A TO252-3
SIS406DN-T1-GE3
SIS406DN-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 9A PPAK1212-8
DMP4015SK3-13
DMP4015SK3-13
Diodes Incorporated
MOSFET P-CH 40V 14A TO252
SIHJ6N65E-T1-GE3
SIHJ6N65E-T1-GE3
Vishay Siliconix
MOSFET N-CH 650V 5.6A PPAK SO-8
MCH3374-TL-E
MCH3374-TL-E
onsemi
MOSFET P-CH 12V 3A SC70FL/MCPH3
STB80NE03L-06T4
STB80NE03L-06T4
STMicroelectronics
MOSFET N-CH 30V 80A D2PAK
IRL3715ZCSTRLP
IRL3715ZCSTRLP
Infineon Technologies
MOSFET N-CH 20V 50A D2PAK
BUK763R6-40C,118
BUK763R6-40C,118
Nexperia USA Inc.
MOSFET N-CH 40V 100A D2PAK
NTDV18N06LT4G
NTDV18N06LT4G
onsemi
MOSFET N-CH 60V 18A DPAK

Related Product By Brand

AM306223R1DBGEVB
AM306223R1DBGEVB
onsemi
BOARD DAUGHTER I2C STEP DVR SOIC
MM3Z5V1C
MM3Z5V1C
onsemi
DIODE ZENER 5.1V 200MW SOD323F
MM3Z68VT1
MM3Z68VT1
onsemi
DIODE ZENER VREG 300MW SOD323
NJT4031NT3G
NJT4031NT3G
onsemi
TRANS NPN 40V 3A SOT223
MMBT4401-ON
MMBT4401-ON
onsemi
TRANS NPN 40V 0.6A SOT23-3
MUN5231T1
MUN5231T1
onsemi
TRANS PREBIAS NPN 202MW SC70-3
2SK3072-TB-E
2SK3072-TB-E
onsemi
NCH 4V DRIVE SERIES
FDS9435A
FDS9435A
onsemi
MOSFET P-CH 30V 5.3A 8SOIC
LM211DR2G
LM211DR2G
onsemi
IC COMPARATOR SGL HI VOLT 8SOIC
NCP1395BDR2G
NCP1395BDR2G
onsemi
IC OFFLINE SW HALF-BRDG 16SOIC
FODM217DV
FODM217DV
onsemi
PHOTOTRANSISTOR OPTO
AR0521SR2M09SURA0-DP
AR0521SR2M09SURA0-DP
onsemi
5MP 1/2 CIS SO