FQP12P10
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onsemi FQP12P10

Manufacturer No:
FQP12P10
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FQP12P10 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 100V 11.5A TO220-3
Delivery:
Payment:
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:290mOhm @ 5.75A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:800 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):75W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number FQP12P10 FQP12P20   FQP17P10   FQP22P10  
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Last Time Buy Active Obsolete
FET Type P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 200 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 11.5A (Tc) 11.5A (Tc) 16.5A (Tc) 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 290mOhm @ 5.75A, 10V 470mOhm @ 5.75A, 10V 190mOhm @ 8.25A, 10V 125mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V 40 nC @ 10 V 39 nC @ 10 V 50 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 25 V 1200 pF @ 25 V 1100 pF @ 25 V 1500 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 75W (Tc) 120W (Tc) 100W (Tc) 125W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3

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