FQI9N08LTU
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onsemi FQI9N08LTU

Manufacturer No:
FQI9N08LTU
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FQI9N08LTU Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 80V 9.3A I2PAK
Delivery:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:9.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:210mOhm @ 4.65A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.1 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:280 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.75W (Ta), 40W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK (TO-262)
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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Similar Products

Part Number FQI9N08LTU FQI9N08TU  
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V
Current - Continuous Drain (Id) @ 25°C 9.3A (Tc) 9.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 10V
Rds On (Max) @ Id, Vgs 210mOhm @ 4.65A, 10V 210mOhm @ 4.65A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.1 nC @ 5 V 7.7 nC @ 10 V
Vgs (Max) ±20V ±25V
Input Capacitance (Ciss) (Max) @ Vds 280 pF @ 25 V 250 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3.75W (Ta), 40W (Tc) 3.75W (Ta), 40W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package I2PAK (TO-262) I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

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