FQI8P10TU
  • Share:

onsemi FQI8P10TU

Manufacturer No:
FQI8P10TU
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FQI8P10TU Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 100V 8A I2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:530mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:470 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.75W (Ta), 65W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK (TO-262)
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
0 Remaining View Similar

In Stock

-
514

Please send RFQ , we will respond immediately.

Similar Products

Part Number FQI8P10TU FQI5P10TU  
Manufacturer onsemi Fairchild Semiconductor
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 530mOhm @ 4A, 10V 1.05Ohm @ 2.25A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V 8.2 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 470 pF @ 25 V 250 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3.75W (Ta), 65W (Tc) 3.75W (Ta), 40W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package I2PAK (TO-262) I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

Related Product By Categories

FQD5N20LTM
FQD5N20LTM
onsemi
MOSFET N-CH 200V 3.8A DPAK
BSS138L
BSS138L
onsemi
MOSFET N-CH 50V 200MA SOT23-3
SQD50N10-8M9L_GE3
SQD50N10-8M9L_GE3
Vishay Siliconix
MOSFET N-CH 100V 50A TO252AA
SIB4317EDK-T1-GE3
SIB4317EDK-T1-GE3
Vishay Siliconix
P-CHANNEL 30-V (D-S) MOSFET POWE
STP150N10F7AG
STP150N10F7AG
STMicroelectronics
N-CHANNEL 100 V STRIPFET F7 POWE
CSD23203W
CSD23203W
Texas Instruments
MOSFET P-CH 8V 3A 6DSBGA
NVMFS5C456NLWFAFT3G
NVMFS5C456NLWFAFT3G
onsemi
MOSFET N-CH 40V 22A/87A 5DFN
2SK060100L
2SK060100L
Panasonic Electronic Components
MOSFET N-CH 80V 500MA MINIP3-F1
IXTQ102N20T
IXTQ102N20T
IXYS
MOSFET N-CH 200V 102A TO3P
SI1471DH-T1-GE3
SI1471DH-T1-GE3
Vishay Siliconix
MOSFET P-CH 30V 2.7A SC70-6
NTMFS4946NT1G
NTMFS4946NT1G
onsemi
MOSFET N-CH 30V 12.7A/100A 5DFN
IPSA70R2K0CEAKMA1
IPSA70R2K0CEAKMA1
Infineon Technologies
MOSFET N-CH 700V 4A TO251-3

Related Product By Brand

MMBD770T1
MMBD770T1
onsemi
DIODE SCHOTTKY 70V 120MW SC70-3
M1MA151WAT2
M1MA151WAT2
onsemi
DIODE SWITCHING 40V 0.15A 3PIN S
NRVHP820LFST1G
NRVHP820LFST1G
onsemi
RECTIFIER 200V 8A
NVMFS020N06CT1G
NVMFS020N06CT1G
onsemi
MOSFET N-CH 60V 9A/28A 5DFN
NVD5863NLT4G-VF01
NVD5863NLT4G-VF01
onsemi
MOSFET N-CH 60V 14.9A/82A DPAK
CAT5123TBI-10-T3
CAT5123TBI-10-T3
onsemi
IC DGTL POT INTERFACE SOT-23
MC10H016FNR2
MC10H016FNR2
onsemi
IC COUNTER 4BIT BINARY 20PLCC
CAT24M01WI-GT3
CAT24M01WI-GT3
onsemi
IC EEPROM 1MBIT I2C 1MHZ 8SOIC
FAN2558S33X
FAN2558S33X
onsemi
IC REG LINEAR 3.3V 180MA SOT23-5
NCP5203MNR2G
NCP5203MNR2G
onsemi
IC REG CTRLR DDR 2OUT 18DFN
HMA121D
HMA121D
onsemi
OPTOISO 3.75KV TRANSISTOR 4SMD
ADM1032ARZ-1RL7
ADM1032ARZ-1RL7
onsemi
SENSOR DIGITAL 0C-100C 8SOIC