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| Part Number | FQI7N10TU | FQI7N60TU | FQI7N80TU | FQI7N10LTU |
|---|---|---|---|---|
| Manufacturer | onsemi | Fairchild Semiconductor | Fairchild Semiconductor | Fairchild Semiconductor |
| Product Status | Obsolete | Active | Active | Obsolete |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V | 600 V | 800 V | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) | 7.4A (Tc) | 6.6A (Tc) | 7.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 5V, 10V |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 3.65A, 10V | 1Ohm @ 3.7A, 10V | 1.5Ohm @ 3.3A, 10V | 350mOhm @ 3.65A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA | 5V @ 250µA | 5V @ 250µA | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 10 V | 38 nC @ 10 V | 52 nC @ 10 V | 6 nC @ 5 V |
| Vgs (Max) | ±25V | ±30V | ±30V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V | 1430 pF @ 25 V | 1850 pF @ 25 V | 290 pF @ 25 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 3.75W (Ta), 40W (Tc) | 3.13W (Ta), 142W (Tc) | 3.13W (Ta), 167W (Tc) | 3.75W (Ta), 40W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | I2PAK (TO-262) | I2PAK (TO-262) | I2PAK (TO-262) | I2PAK (TO-262) |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA |
