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| Part Number | FQI3P50TU | FQI1P50TU | FQI3P20TU |
|---|---|---|---|
| Manufacturer | onsemi | Fairchild Semiconductor | Fairchild Semiconductor |
| Product Status | Obsolete | Obsolete | Obsolete |
| FET Type | P-Channel | P-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V | 500 V | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Tc) | 1.5A (Tc) | 2.8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 4.9Ohm @ 1.35A, 10V | 10.5Ohm @ 750mA, 10V | 2.7Ohm @ 1.4A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA | 5V @ 250µA | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V | 14 nC @ 10 V | 8 nC @ 10 V |
| Vgs (Max) | ±30V | ±30V | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 660 pF @ 25 V | 350 pF @ 25 V | 250 pF @ 25 V |
| FET Feature | - | - | - |
| Power Dissipation (Max) | 3.13W (Ta), 85W (Tc) | 3.13W (Ta), 63W (Tc) | 3.13W (Ta), 52W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | I2PAK (TO-262) | I2PAK (TO-262) | I2PAK (TO-262) |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA |
