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| Part Number | FQI3N40TU | FQI3N80TU | FQI5N40TU | FQI3N90TU | FQI3N30TU |
|---|---|---|---|---|---|
| Manufacturer | onsemi | Fairchild Semiconductor | onsemi | onsemi | Fairchild Semiconductor |
| Product Status | Obsolete | Obsolete | Obsolete | Obsolete | Obsolete |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 400 V | 800 V | 400 V | 900 V | 300 V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) | 3A (Tc) | 4.5A (Tc) | 3.6A (Tc) | 3.2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 3.4Ohm @ 1.25A, 10V | 5Ohm @ 1.5A, 10V | 1.6Ohm @ 2.25A, 10V | 4.25Ohm @ 1.8A, 10V | 2.2Ohm @ 1.6A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA | 5V @ 250µA | 5V @ 250µA | 5V @ 250µA | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 10 V | 19 nC @ 10 V | 13 nC @ 10 V | 26 nC @ 10 V | 7 nC @ 10 V |
| Vgs (Max) | ±30V | ±30V | ±30V | ±30V | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 230 pF @ 25 V | 690 pF @ 25 V | 460 pF @ 25 V | 910 pF @ 25 V | 230 pF @ 25 V |
| FET Feature | - | - | - | - | - |
| Power Dissipation (Max) | 3.13W (Ta), 55W (Tc) | 3.13W (Ta), 107W (Tc) | 3.13W (Ta), 70W (Tc) | 3.13W (Ta), 130W (Tc) | 3.13W (Ta), 55W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | I2PAK (TO-262) | I2PAK (TO-262) | I2PAK (TO-262) | I2PAK (TO-262) | I2PAK (TO-262) |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA |
