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| Part Number | FQI17P06TU | FQI7P06TU | FQI47P06TU | FQI27P06TU | FQI11P06TU |
|---|---|---|---|---|---|
| Manufacturer | onsemi | Fairchild Semiconductor | Fairchild Semiconductor | onsemi | Fairchild Semiconductor |
| Product Status | Obsolete | Obsolete | Obsolete | Obsolete | Obsolete |
| FET Type | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V | 60 V | 60 V | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) | 7A (Tc) | 47A (Tc) | 27A (Tc) | 11.4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 8.5A, 10V | 410mOhm @ 3.5A, 10V | 26mOhm @ 23.5A, 10V | 70mOhm @ 13.5A, 10V | 175mOhm @ 5.7A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V | 8.2 nC @ 10 V | 110 nC @ 10 V | 43 nC @ 10 V | 17 nC @ 10 V |
| Vgs (Max) | ±25V | ±25V | ±25V | ±25V | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 25 V | 295 pF @ 25 V | 3600 pF @ 25 V | 1400 pF @ 25 V | 550 pF @ 25 V |
| FET Feature | - | - | - | - | - |
| Power Dissipation (Max) | 3.75W (Ta), 79W (Tc) | 3.75W (Ta), 45W (Tc) | 3.75W (Ta), 160W (Tc) | 3.75W (Ta), 120W (Tc) | 3.13W (Ta), 53W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | I2PAK (TO-262) | I2PAK (TO-262) | I2PAK (TO-262) | I2PAK | I2PAK (TO-262) |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA |
