FQD7P06TF
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onsemi FQD7P06TF

Manufacturer No:
FQD7P06TF
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FQD7P06TF Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 60V 5.4A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:451mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.2 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:295 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 28W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number FQD7P06TF FQD7P06TM  
Manufacturer onsemi onsemi
Product Status Obsolete Last Time Buy
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 5.4A (Tc) 5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 451mOhm @ 2.7A, 10V 451mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.2 nC @ 10 V 8.2 nC @ 10 V
Vgs (Max) ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 295 pF @ 25 V 295 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 28W (Tc) 2.5W (Ta), 28W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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