FQD6N60CTM-WS
  • Share:

onsemi FQD6N60CTM-WS

Manufacturer No:
FQD6N60CTM-WS
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FQD6N60CTM-WS Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 4A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:810 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):80W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$0.71
1,212

Please send RFQ , we will respond immediately.

Similar Products

Part Number FQD6N60CTM-WS FQD2N60CTM-WS   FQD3N60CTM-WS   FQD5N60CTM-WS  
Manufacturer onsemi onsemi onsemi onsemi
Product Status Not For New Designs Obsolete Last Time Buy Not For New Designs
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc) 1.9A (Tc) 2.4A (Tc) 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 2A, 10V 4.7Ohm @ 950mA, 10V 3.4Ohm @ 1.2A, 10V 2.5Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V 12 nC @ 10 V 14 nC @ 10 V 19 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 810 pF @ 25 V 235 pF @ 25 V 565 pF @ 25 V 670 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 80W (Tc) 2.5W (Ta), 44W (Tc) 50W (Tc) 2.5W (Ta), 49W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252AA TO-252AA TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

AOT15S65L
AOT15S65L
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 650V 15A TO220
BUK7212-55B,118
BUK7212-55B,118
Nexperia USA Inc.
MOSFET N-CH 55V 75A DPAK
TK32E12N1,S1X
TK32E12N1,S1X
Toshiba Semiconductor and Storage
MOSFET N CH 120V 60A TO-220
DMN33D8LTQ-7
DMN33D8LTQ-7
Diodes Incorporated
MOSFET N-CH 30V 115MA SOT523
IRLR8503TR
IRLR8503TR
Infineon Technologies
MOSFET N-CH 30V 44A DPAK
STP2NK60Z
STP2NK60Z
STMicroelectronics
MOSFET N-CH 600V 1.4A TO220AB
IRFZ44ZSPBF
IRFZ44ZSPBF
Infineon Technologies
MOSFET N-CH 55V 51A D2PAK
FQP4N60
FQP4N60
onsemi
MOSFET N-CH 600V 4.4A TO220-3
HUFA75639S3S
HUFA75639S3S
onsemi
MOSFET N-CH 100V 56A D2PAK
STI12NM50N
STI12NM50N
STMicroelectronics
MOSFET N-CH 500V 11A I2PAK
SSM3J307T(TE85L,F)
SSM3J307T(TE85L,F)
Toshiba Semiconductor and Storage
MOSFET P-CH 20V 5A TSM
STD65N55LF3
STD65N55LF3
STMicroelectronics
MOSFET N-CH 55V 80A DPAK

Related Product By Brand

MAC12HCD
MAC12HCD
onsemi
TRIAC, 400V, 12A, TO-220AB
FJA4313OTU
FJA4313OTU
onsemi
TRANS NPN 250V 17A TO3PN
KSD261YTA
KSD261YTA
onsemi
TRANS NPN 20V 0.5A TO92-3
FDD5N60NZTM
FDD5N60NZTM
onsemi
MOSFET N-CH 600V 4A DPAK
MC10E404FN
MC10E404FN
onsemi
IC GATE AND/NAND QD DIFF 28-PLCC
NL17SZ04XV5T2
NL17SZ04XV5T2
onsemi
IC INVERTER 1CH 1-INP SOT553
74VCX163245G
74VCX163245G
onsemi
IC TRNSLTR BIDIRECTIONAL 54FBGA
CAT24C01WI-G
CAT24C01WI-G
onsemi
IC EEPROM 1KBIT I2C 400KHZ 8SOIC
TL431BVP
TL431BVP
onsemi
IC VREF SHUNT ADJ 0.4% 8DIP
LM317LBZRP
LM317LBZRP
onsemi
IC REG LINEAR POS ADJ 100MA TO92
NCP717AMX285TCG
NCP717AMX285TCG
onsemi
IC REG LINEAR 2.85V 300MA 4XDFN
HMA121
HMA121
onsemi
OPTOISO 3.75KV TRANSISTOR 4SMD