FQD5N40TF
  • Share:

onsemi FQD5N40TF

Manufacturer No:
FQD5N40TF
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FQD5N40TF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 400V 3.4A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):400 V
Current - Continuous Drain (Id) @ 25°C:3.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.6Ohm @ 1.7A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:460 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 45W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
57

Please send RFQ , we will respond immediately.

Similar Products

Part Number FQD5N40TF FQD5N40TM   FQD5N50TF   FQD6N40TF   FQD2N40TF   FQD3N40TF   FQD5N20TF   FQD5N30TF  
Manufacturer onsemi Fairchild Semiconductor Fairchild Semiconductor onsemi onsemi Fairchild Semiconductor onsemi Fairchild Semiconductor
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V 400 V 500 V 400 V 400 V 400 V 200 V 300 V
Current - Continuous Drain (Id) @ 25°C 3.4A (Tc) 3.4A (Tc) 3.5A (Tc) 4.2A (Tc) 1.4A (Tc) 2A (Tc) 3.8A (Tc) 4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 1.7A, 10V 1.6Ohm @ 1.7A, 10V 1.8Ohm @ 1.75A, 10V 1.15Ohm @ 2.1A, 10V 5.8Ohm @ 700mA, 10V 3.4Ohm @ 1A, 10V 1.2Ohm @ 1.9A, 10V 900mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V 13 nC @ 10 V 17 nC @ 10 V 17 nC @ 10 V 5.5 nC @ 10 V 7.5 nC @ 10 V 7.5 nC @ 10 V 13 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 460 pF @ 25 V 460 pF @ 25 V 610 pF @ 25 V 620 pF @ 25 V 150 pF @ 25 V 230 pF @ 25 V 270 pF @ 25 V 430 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 2.5W (Ta), 45W (Tc) 2.5W (Ta), 45W (Tc) 2.5W (Ta), 50W (Tc) 2.5W (Ta), 50W (Tc) 2.5W (Ta), 25W (Tc) 2.5W (Ta), 30W (Tc) 2.5W (Ta), 37W (Tc) 2.5W (Ta), 45W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252, (D-Pak) TO-252, (D-Pak) TO-252AA TO-252AA TO-252, (D-Pak) TO-252AA TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

BUK9609-40B,118
BUK9609-40B,118
Nexperia USA Inc.
MOSFET N-CH 40V 75A D2PAK
SQJ422EP-T1_GE3
SQJ422EP-T1_GE3
Vishay Siliconix
MOSFET N-CH 40V 74A PPAK SO-8
IRFB4510PBF
IRFB4510PBF
Infineon Technologies
MOSFET N-CH 100V 62A TO220AB
PXP011-20QXJ
PXP011-20QXJ
Nexperia USA Inc.
PXP011-20QX/SOT8002/MLPAK33
RM12N650LD
RM12N650LD
Rectron USA
MOSFET N-CH 650V 11.5A TO252-2
DI035P04PT-AQ
DI035P04PT-AQ
Diotec Semiconductor
MOSFET, -40V, -35A, P, 25W
IRL2703S
IRL2703S
Infineon Technologies
MOSFET N-CH 30V 24A D2PAK
IRL2703PBF
IRL2703PBF
Infineon Technologies
MOSFET N-CH 30V 24A TO220AB
BUK9604-40A,118
BUK9604-40A,118
Nexperia USA Inc.
MOSFET N-CH 40V 75A D2PAK
SI7703EDN-T1-GE3
SI7703EDN-T1-GE3
Vishay Siliconix
MOSFET P-CH 20V 4.3A PPAK1212-8
ATP613-TL-H
ATP613-TL-H
onsemi
MOSFET N-CH 500V 5.5A ATPAK
PHB95NQ04LT,118
PHB95NQ04LT,118
NXP USA Inc.
MOSFET N-CH 40V 75A D2PAK

Related Product By Brand

1N4006FF
1N4006FF
onsemi
DIODE GEN PURP 800V 1A DO41
MM3Z2V4T1G
MM3Z2V4T1G
onsemi
DIODE ZENER 2.4V 300MW SOD323
BTA30-800CW3G
BTA30-800CW3G
onsemi
SNUBBERLESS TRIAC, 800V V(DRM),
FJPF13007H2TU
FJPF13007H2TU
onsemi
TRANS NPN 400V 8A TO220F-3
MC100LVEL11DT
MC100LVEL11DT
onsemi
IC CLOCK BUFFER 1:2 1GHZ 8-TSSOP
FSTD16861MTDX
FSTD16861MTDX
onsemi
20-BIT BUS SWITCH WITH LEVEL SHI
MC100EP101MNR4G
MC100EP101MNR4G
onsemi
IC GATE OR/NOR QUAD 4INP 32-QFN
7WBD3306CMX1TCG
7WBD3306CMX1TCG
onsemi
IC BUS SWITCH 1 X 1:1 8ULLGA
MC100LVEP16DR2
MC100LVEP16DR2
onsemi
IC RECEIVER/DRVR DIFF ECL 8-SOIC
4N38W
4N38W
onsemi
OPTOISO 5.3KV TRANS W/BASE 6DIP
HMAA2705V
HMAA2705V
onsemi
OPTOISO 3.75KV TRANSISTOR 4SMD
4N40S
4N40S
onsemi
OPTOISOLATOR 5.3KV SCR 6SMD