FQD4N25TF
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onsemi FQD4N25TF

Manufacturer No:
FQD4N25TF
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FQD4N25TF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 250V 3A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.75Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.6 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:200 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 37W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number FQD4N25TF FQD4N25TM   FQD8N25TF   FQD4P25TF   FQD6N25TF   FQD9N25TF   FQD4N20TF  
Manufacturer onsemi Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel P-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V 250 V 250 V 250 V 250 V 250 V 200 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc) 3A (Tc) 6.2A (Tc) 3.1A (Tc) 4.4A (Tc) 7.4A (Tc) 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.75Ohm @ 1.5A, 10V 1.75Ohm @ 1.5A, 10V 550mOhm @ 3.1A, 10V 2.1Ohm @ 1.55A, 10V 1Ohm @ 2.2A, 10V 420mOhm @ 3.7A, 10V 1.4Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.6 nC @ 10 V 5.6 nC @ 10 V 15 nC @ 10 V 14 nC @ 10 V 8.5 nC @ 10 V 20 nC @ 10 V 6.5 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 25 V 200 pF @ 25 V 530 pF @ 25 V 420 pF @ 25 V 300 pF @ 25 V 700 pF @ 25 V 220 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 2.5W (Ta), 37W (Tc) 2.5W (Ta), 37W (Tc) 2.5W (Ta), 50W (Tc) 2.5W (Ta), 45W (Tc) 2.5W (Ta), 45W (Tc) 2.5W (Ta), 55W (Tc) 2.5W (Ta), 30W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252, (D-Pak) TO-252, (D-Pak) TO-252, (D-Pak) TO-252AA TO-252AA TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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