FQD2N80TM
  • Share:

onsemi FQD2N80TM

Manufacturer No:
FQD2N80TM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FQD2N80TM Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 1.8A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6.3Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:550 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$1.26
722

Please send RFQ , we will respond immediately.

Similar Products

Part Number FQD2N80TM FQD2N90TM   FQD1N80TM   FQD2N30TM   FQD2N40TM   FQD2N50TM   FQD2N60TM   FQD2N80TF  
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Active Last Time Buy Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 900 V 800 V 300 V 400 V 500 V 600 V 800 V
Current - Continuous Drain (Id) @ 25°C 1.8A (Tc) 1.7A (Tc) 1A (Tc) 1.7A (Tc) 1.4A (Tc) 1.6A (Tc) 2A (Tc) 1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 6.3Ohm @ 900mA, 10V 7.2Ohm @ 850mA, 10V 20Ohm @ 500mA, 10V 3.7Ohm @ 850mA, 10V 5.8Ohm @ 700mA, 10V 5.3Ohm @ 800mA, 10V 4.7Ohm @ 1A, 10V 6.3Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V 15 nC @ 10 V 7.2 nC @ 10 V 5 nC @ 10 V 5.5 nC @ 10 V 8 nC @ 10 V 11 nC @ 10 V 15 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 550 pF @ 25 V 500 pF @ 25 V 195 pF @ 25 V 130 pF @ 25 V 150 pF @ 25 V 230 pF @ 25 V 350 pF @ 25 V 550 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 2.5W (Ta), 50W (Tc) 2.5W (Ta), 50W (Tc) 2.5W (Ta), 45W (Tc) 2.5W (Ta), 25W (Tc) 2.5W (Ta), 25W (Tc) 2.5W (Ta), 30W (Tc) 2.5W (Ta), 45W (Tc) 2.5W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252AA TO-252AA TO-252AA TO-252AA TO-252AA TO-252AA TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

PSMN3R3-80PS,127
PSMN3R3-80PS,127
Nexperia USA Inc.
MOSFET N-CH 80V 120A TO220AB
AO3434A
AO3434A
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 4A SOT23-3L
PHP20N06T,127
PHP20N06T,127
Nexperia USA Inc.
MOSFET N-CH 55V 20.3A TO220AB
FDS3670
FDS3670
Fairchild Semiconductor
MOSFET N-CH 100V 6.3A 8SOIC
IPP08CNE8NG
IPP08CNE8NG
Infineon Technologies
N-CHANNEL POWER MOSFET
PJQ4442P-AU_R2_000A1
PJQ4442P-AU_R2_000A1
Panjit International Inc.
40V N-CHANNEL ENHANCEMENT MODE M
DMG3402LQ-13
DMG3402LQ-13
Diodes Incorporated
MOSFET N-CH 30V 4A SOT23
NVMFS4C01NWFT3G
NVMFS4C01NWFT3G
onsemi
MOSFET N-CH 30V 49A/319A 5DFN
IRF7460
IRF7460
Infineon Technologies
MOSFET N-CH 20V 12A 8SO
IXFC96N15P
IXFC96N15P
IXYS
MOSFET N-CH 150V 42A ISOPLUS220
NP90N03VHG-E1-AY
NP90N03VHG-E1-AY
Renesas Electronics America Inc
MOSFET N-CH 30V 90A TO252
PH9030L,115
PH9030L,115
NXP USA Inc.
MOSFET N-CH 30V 63A LFPAK56

Related Product By Brand

1SMA6.5AT3G
1SMA6.5AT3G
onsemi
TVS DIODE 6.5VWM 11.2VC 6TDFN
NCV7683GEVB
NCV7683GEVB
onsemi
EVAL BOARD NCV7683G
1N5337BRL
1N5337BRL
onsemi
DIODE ZENER 4.7V 5W AXIAL
BC847CMTF
BC847CMTF
onsemi
TRANS NPN 45V 0.1A SOT23-3
MPSA06G
MPSA06G
onsemi
TRANS NPN 80V 0.5A TO92
CPH6901-TL-E
CPH6901-TL-E
onsemi
NCH+NCH J-FET
TLV271SN1T1G
TLV271SN1T1G
onsemi
IC OPAMP GP 1 CIRCUIT 5TSOP
LM2575D2T-12R4G
LM2575D2T-12R4G
onsemi
IC REG BUCK 12V 1A D2PAK-5
NCV8170AXV330T2G
NCV8170AXV330T2G
onsemi
IC REG LIN 3.3V 150MA SOT563-6
NCP156ABFCT100280T2G
NCP156ABFCT100280T2G
onsemi
IC REG LINEAR 1V/2.8V 6WLCSP
MC78L08ABP
MC78L08ABP
onsemi
IC REG LINEAR 8V 100MA TO92-3
TCP-4139UB-DT
TCP-4139UB-DT
onsemi
IC PTIC TUNABLE 4.1 4WLCSP