FQD2N30TM
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onsemi FQD2N30TM

Manufacturer No:
FQD2N30TM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FQD2N30TM Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 300V 1.7A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):300 V
Current - Continuous Drain (Id) @ 25°C:1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.7Ohm @ 850mA, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:130 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number FQD2N30TM FQD2N90TM   FQD5N30TM   FQD2N80TM   FQD2N40TM   FQD3N30TM   FQD2N50TM   FQD2N60TM  
Manufacturer onsemi onsemi Fairchild Semiconductor onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Active Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V 900 V 300 V 800 V 400 V 300 V 500 V 600 V
Current - Continuous Drain (Id) @ 25°C 1.7A (Tc) 1.7A (Tc) 4.4A (Tc) 1.8A (Tc) 1.4A (Tc) 2.4A (Tc) 1.6A (Tc) 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 3.7Ohm @ 850mA, 10V 7.2Ohm @ 850mA, 10V 900mOhm @ 2.2A, 10V 6.3Ohm @ 900mA, 10V 5.8Ohm @ 700mA, 10V 2.2Ohm @ 1.2A, 10V 5.3Ohm @ 800mA, 10V 4.7Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5 nC @ 10 V 15 nC @ 10 V 13 nC @ 10 V 15 nC @ 10 V 5.5 nC @ 10 V 7 nC @ 10 V 8 nC @ 10 V 11 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 130 pF @ 25 V 500 pF @ 25 V 430 pF @ 25 V 550 pF @ 25 V 150 pF @ 25 V 230 pF @ 25 V 230 pF @ 25 V 350 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 2.5W (Ta), 25W (Tc) 2.5W (Ta), 50W (Tc) 2.5W (Ta), 45W (Tc) 2.5W (Ta), 50W (Tc) 2.5W (Ta), 25W (Tc) 2.5W (Ta), 30W (Tc) 2.5W (Ta), 30W (Tc) 2.5W (Ta), 45W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252AA TO-252, (D-Pak) TO-252AA TO-252AA TO-252AA TO-252AA TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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