onsemi-FQD19N10TM_F080 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	15.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	100mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	25 nC @ 10 V
Vgs (Max):	±25V
Input Capacitance (Ciss) (Max) @ Vds:	780 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	2.5W (Ta), 50W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-252AA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

onsemi FQD19N10TM_F080