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| Part Number | FQD19N10LTM | FQD19N10TM | FQD13N10LTM | FQD19N10LTF |
|---|---|---|---|---|
| Manufacturer | onsemi | onsemi | onsemi | Fairchild Semiconductor |
| Product Status | Active | Last Time Buy | Active | Obsolete |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V | 100 V | 100 V | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 15.6A (Tc) | 15.6A (Tc) | 10A (Tc) | 15.6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V | 10V | 5V, 10V | 5V, 10V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 7.8A, 10V | 100mOhm @ 7.8A, 10V | 180mOhm @ 5A, 10V | 100mOhm @ 7.8A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA | 4V @ 250µA | 2V @ 250µA | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 5 V | 25 nC @ 10 V | 12 nC @ 5 V | 18 nC @ 5 V |
| Vgs (Max) | ±20V | ±25V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 25 V | 780 pF @ 25 V | 520 pF @ 25 V | 870 pF @ 25 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) | 2.5W (Ta), 50W (Tc) | 2.5W (Ta), 40W (Tc) | 2.5W (Ta), 50W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | TO-252AA | TO-252AA | TO-252AA | TO-252, (D-Pak) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
