FQB8P10TM
  • Share:

onsemi FQB8P10TM

Manufacturer No:
FQB8P10TM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FQB8P10TM Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 100V 8A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:530mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:470 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.75W (Ta), 65W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$1.48
566

Please send RFQ , we will respond immediately.

Similar Products

Part Number FQB8P10TM FQB5P10TM  
Manufacturer onsemi Fairchild Semiconductor
Product Status Last Time Buy Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 530mOhm @ 4A, 10V 1.05Ohm @ 2.25A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V 8.2 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 470 pF @ 25 V 250 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3.75W (Ta), 65W (Tc) 3.75W (Ta), 40W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

UPA2521T1H-T1-AT
UPA2521T1H-T1-AT
Renesas Electronics America Inc
MOSFET N-CH 30V 8A 8VSOF
IRFI9520GPBF
IRFI9520GPBF
Vishay Siliconix
MOSFET P-CH 100V 5.2A TO220-3
PSMN7R6-60BS,118
PSMN7R6-60BS,118
Nexperia USA Inc.
MOSFET N-CH 60V 92A D2PAK
STD7NS20T4
STD7NS20T4
STMicroelectronics
MOSFET N-CH 200V 7A DPAK
RM30P55LD
RM30P55LD
Rectron USA
MOSFET P-CHANNEL 55V 30A TO252-2
SIHF9630S-GE3
SIHF9630S-GE3
Vishay Siliconix
MOSFET P-CH 200V 6.5A D2PAK
IRL3202STRR
IRL3202STRR
Infineon Technologies
MOSFET N-CH 20V 48A D2PAK
BSS123L6327HTSA1
BSS123L6327HTSA1
Infineon Technologies
MOSFET N-CH 100V 170MA SOT23-3
IRLR8259PBF
IRLR8259PBF
Infineon Technologies
MOSFET N-CH 25V 57A DPAK
SIS334DN-T1-GE3
SIS334DN-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 20A PPAK1212-8
MVB50P03HDLT4G
MVB50P03HDLT4G
onsemi
MOSFET P-CH 30V 50A D2PAK-3
RT1A060APTR
RT1A060APTR
Rohm Semiconductor
MOSFET P-CH 12V 6A 8TSST

Related Product By Brand

NCP1397GANGEVB
NCP1397GANGEVB
onsemi
EVAL BOARD NCP1397GANG
MPN3404RLRA
MPN3404RLRA
onsemi
PIN DIODE, 20V V(BR), TO-92
1N457TR
1N457TR
onsemi
1N457 - HIGH CONDUCTANCE LOW LEA
MMSZ5248BT1
MMSZ5248BT1
onsemi
DIODE ZENER 18V 500MW SOD-123
2SA1248S
2SA1248S
onsemi
SMALL SIGNAL BIPOLAR TRANSISTOR
NTHL040N120SC1
NTHL040N120SC1
onsemi
SICFET N-CH 1200V 60A TO247-3
NTB75N06T4G
NTB75N06T4G
onsemi
MOSFET N-CH 60V 75A D2PAK
N57L5128TBD10TG
N57L5128TBD10TG
onsemi
IC DGTL POT INTERFACE SOT23-8
NLV74HCT541ADTRG
NLV74HCT541ADTRG
onsemi
IC BUF NON-INVERT 5.5V 20TSSOP
MC100E457FN
MC100E457FN
onsemi
IC MULTIPLEXER 3 X 2:1 28PLCC
NCV8560SN280T1G
NCV8560SN280T1G
onsemi
IC REG LINEAR 2.8V 150MA 5TSOP
NCV51190MNTAG
NCV51190MNTAG
onsemi
IC REG LDO DDR 1OUT 8DFN